Sharif Digital Repository

In this brief, we use the alpha power law model for MOS devices to reach a more accurate modeling of CMOS buffers in very deep submicrometer technologies. We derive alpha model parameters of a CMOS buffer for 90-, 65-, and 45-nm technologies using HSPICE simulations. By analytical efforts we find the output resistance of a minimum-size buffer and compare it with those extracted from HSPICE simulations. We propose a new model for the output resistance of a given-size buffer in any technology, which demonstrates 3% error on average as opposed to the conventional model. Also a new buffer resistance is proposed analytically and numerically to calculate the crosstalk for interconnect analysis...