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    A novel hybrid algorithm for creating self-organizing fuzzy neural networks

    , Article Neurocomputing ; Volume 73, Issue 1-3 , 2009 , Pages 517-524 ; 09252312 (ISSN) Khayat, O ; Ebadzadeh, M. M ; Shahdoosti, H. R ; Rajaei, R ; Khajehnasiri, I ; Sharif University of Technology
    2009
    Abstract
    A novel hybrid algorithm based on a genetic algorithm and particle swarm optimization to design a fuzzy neural network, named self-organizing fuzzy neural network based on GA and PSO (SOFNNGAPSO), to implement Takagi-Sugeno (TS) type fuzzy models is proposed in this paper. The proposed algorithm, as a new hybrid algorithm, consists of two phases. A tuning based on TS's fuzzy model is applied to identify the fuzzy structure, and also a fuzzy cluster validity index is utilized to determine the optimal number of clusters. To obtain a more precision model, GA and PSO are performed to conduct fine tuning for the obtained parameter set of the premise parts and consequent parts in the... 

    A Low-Cost highly reliable spintronic true random number generator circuit for secure cryptography

    , Article SPIN ; Volume 10, Issue 1 , 2020 Alibeigi, I ; Amirany, A ; Rajaei, R ; Tabandeh, M ; Shouraki, S. B ; Sharif University of Technology
    World Scientific Publishing Co. Pte Ltd  2020
    Abstract
    Generation of random numbers is one of the most important steps in cryptographic algorithms. High endurance, high performance and low energy consumption are the attractive features offered by the Magnetic Tunnel Junction (MTJ) devices. Therefore, they have been considered as one of the promising candidates for next-generation digital integrated circuits. In this paper, a new circuit design for true random number generation using MTJs is proposed. Our proposed circuit offers a high speed, low power and a truly random number generation. In our design, we employed two MTJs that are configured in special states. Generated random bit at the output of the proposed circuit is returned to the write... 

    A High Performance MRAM Cell Through Single Free-Layer Dual Fixed-Layer Magnetic Tunnel Junction

    , Article IEEE Transactions on Magnetics ; Volume 58, Issue 12 , 2022 ; 00189464 (ISSN) Alibeigi, I ; Tabandeh, M ; Shouraki, S. B ; Patooghy, A ; Rajaei, R ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2022
    Abstract
    As technology size scales down, magnetic tunnel junctions (MTJs) as a promising technology are becoming more and more sensitive to process variation, especially in oxide barrier thickness. Process variation particularly affects the cell resistance and the critical switching current for the smaller dimensions. This article proposes an MTJ cell with one free and two pinned layers, which highly improves the process variation robustness. By employing the spin transfer torque (STT)-spin-Hall effect (SHE) switching method, our proposed MTJ cell improves the switching speed and lowers the switching power consumption. Per simulations, an MRAM cell built with the proposed MTJ cell offers up to 36%...