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    Explicit dynamics X-FEM simulation of heterogeneous materials

    , Article Finite Elements in Analysis and Design ; Volume 56 , 2012 , Pages 52-79 ; 0168874X (ISSN) Shahbeyk, S ; Yaghoobi, M ; Vafai, A ; Sharif University of Technology
    Abstract
    An explicit dynamics extended finite element method (X-FEM) is applied to the problems with material interfaces. To this end, the available X-FEM element mass matrix lumping techniques have been identified and assessed. It is shown that all the methods have their own limitations and are not general enough to handle the enrichment functions specifically developed for the elements with material interfaces. Hence, a general element mass matrix lumping technique has been introduced which exactly preserves the kinetic energies of the basic rigid body and enrichment modes. The idea is borrowed from the previously published method for a specific range of enrichment functions and extended to... 

    Mesoscale finite element prediction of concrete failure

    , Article Computational Materials Science ; Volume 50, Issue 7 , 2011 , Pages 1973-1990 ; 09270256 (ISSN) Shahbeyk, S ; Hosseini, M ; Yaghoobi, M ; Sharif University of Technology
    Abstract
    The present paper studies the failure of concrete from the mesoscopic point of view. Biphasic cubic concrete samples containing spherical aggregates embedded in a homogenized mortar have been simulated using standard finite element method. Linear elasticity and damage-plasticity hypotheses are considered for the aggregates and mortar, respectively. Various triaxial loading conditions are assumed for each sample to generate adequate discrete failure points within the stress space. In the next step, the approximated failure surfaces of specimens are constructed using the Delaunay triangulation technique. The effects of mesostructural features such as aggregate grading curve, aggregate... 

    Class-J2 Power Amplifiers

    , Article IEEE Transactions on Circuits and Systems I: Regular Papers ; Volume 64, Issue 8 , 2017 , Pages 1989-2002 ; 15498328 (ISSN) Alizadeh, A ; Yaghoobi, M ; Medi, A ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2017
    Abstract
    This paper presents the theoretical introduction and experimental validation of the "Class-J2 Mode Power Amplifier," which provides higher efficiency and output power compared with conventional class-J mode counterpart. This mode of operation is realized by injection of the second-harmonic current to drain node of a class-J power amplifier (PA) to reduce the 45° phase shift between drain current and voltage signals. Similar to class-J PAs, the second-harmonic impedance of class-J2 PAs is purely reactive to simplify the design of the output matching network. The auxiliary second-harmonic injection circuit comprises a transistor biased in class-B mode followed by a class-C biased amplifier to... 

    Design of a 2-12-GHz bidirectional distributed amplifier in a 0.18- mu m CMOS technology

    , Article IEEE Transactions on Microwave Theory and Techniques ; Volume 67, Issue 2 , 2019 , Pages 754-764 ; 00189480 (ISSN) Alizadeh, A ; Meghdadi, M ; Yaghoobi, M ; Medi, A ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2019
    Abstract
    This paper presents the design and implementation of a bidirectional distributed amplifier (BDDA) in a 0.18- boldsymbol mu ext{m} CMOS process. The performance of the BDDA is theoretically analyzed, and the optimum number of gain stages ( n-{ ext {opt}} ), maximum achievable power gain ( G-{P} ), and circuit bandwidth are formulated. In addition, a new formula for proper choice of the number of DA stages (i.e., n ) is offered where dc-power consumption of the circuit ( P-{ ext {dc}} ) is also considered. This formula optimizes G-{P}/P-{ ext {dc}} , and it is preferred over the conventional n-{ ext {opt}} formula. To validate the theoretical analyses, a 2-12-GHz BDDA with high output 1-dB... 

    A 10-W X-Band Class-F High-Power Amplifier in a 0.25-μm GaAs pHEMT Technology

    , Article IEEE Transactions on Microwave Theory and Techniques ; 2020 Alizadeh, A ; Yaghoobi, M ; Meghdadi, M ; Medi, A ; Kiaei, S ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2020
    Abstract
    In this article, a design methodology is presented to realize integrated class-F high-power amplifiers (HPAs). A harmonic-control network (HCN) is proposed to present short- and open-circuit impedances to each transistor employed in the output stage of the HPA at 2f_0 and 3f_0 frequencies. The HCN absorbs the parasitic capacitance of the transistor and lends itself to be absorbed in the matching and power combiner networks, reducing the die area of the HPA. A proof-of-concept 9.7-10.3-GHz class-F HPA was designed and implemented in a 0.25-μm GaAs pHEMT technology with VDD of 6 V. The designed HPA consists of two amplifying stages, and its output stage includes 16 transistors in parallel to... 

    A 10-W X-Band class-f high-power amplifier in a 0.25-μm GaAs pHEMT technology

    , Article IEEE Transactions on Microwave Theory and Techniques ; Volume 69, Issue 1 , 2021 , Pages 157-169 ; 00189480 (ISSN) Alizadeh, A ; Yaghoobi, M ; Meghdadi, M ; Medi, A ; Kiaei, S ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2021
    Abstract
    In this article, a design methodology is presented to realize integrated class-F high-power amplifiers (HPAs). A harmonic-control network (HCN) is proposed to present short- and open-circuit impedances to each transistor employed in the output stage of the HPA at {2}f {0} and {3}f {0} frequencies. The HCN absorbs the parasitic capacitance of the transistor and lends itself to be absorbed in the matching and power combiner networks, reducing the die area of the HPA. A proof-of-concept 9.7-10.3-GHz class-F HPA was designed and implemented in a 0.25- μ ext{m} GaAs pHEMT technology with V {DD} of 6 V. The designed HPA consists of two amplifying stages, and its output stage includes 16... 

    A 10-W X-band class-F high-power amplifier in a 0.25-μm GaAs pHEMT technology

    , Article IEEE Transactions on Microwave Theory and Techniques ; Volume 69, Issue 1 , 2021 , Pages 157-169 ; 00189480 (ISSN) Alizadeh, A ; Yaghoobi, M ; Meghdadi, M ; Medi, A ; Kiaei, S ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2021
    Abstract
    In this article, a design methodology is presented to realize integrated class-F high-power amplifiers (HPAs). A harmonic-control network (HCN) is proposed to present short- and open-circuit impedances to each transistor employed in the output stage of the HPA at {2}f {0} and {3}f {0} frequencies. The HCN absorbs the parasitic capacitance of the transistor and lends itself to be absorbed in the matching and power combiner networks, reducing the die area of the HPA. A proof-of-concept 9.7-10.3-GHz class-F HPA was designed and implemented in a 0.25- μ ext{m} GaAs pHEMT technology with V {DD} of 6 V. The designed HPA consists of two amplifying stages, and its output stage includes 16... 

    On-demand ferrofluid droplet formation with non-linear magnetic permeability in the presence of high non-uniform magnetic fields

    , Article Scientific Reports ; Volume 12, Issue 1 , 2022 ; 20452322 (ISSN) Bijarchi, M. A ; Yaghoobi, M ; Favakeh, A ; Shafii, M. B ; Sharif University of Technology
    Nature Research  2022
    Abstract
    The magnetic actuation of ferrofluid droplets offers an inspiring tool in widespread engineering and biological applications. In this study, the dynamics of ferrofluid droplet generation with a Drop-on-Demand feature under a non-uniform magnetic field is investigated by multiscale numerical modeling. Langevin equation is assumed for ferrofluid magnetic susceptibility due to the strong applied magnetic field. Large and small computational domains are considered. In the larger domain, the magnetic field is obtained by solving Maxwell equations. In the smaller domain, a coupling of continuity, Navier Stokes, two-phase flow, and Maxwell equations are solved by utilizing the magnetic field...