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Semiconductor TiO2-Al2O3 thin film gas sensors derived from aqueous particulate sol-gel process
, Article Materials Science in Semiconductor Processing ; Vol. 27, issue , 2014 , p. 711-718 ; Sharif University of Technology
Abstract
Nanostructured TiO2-Al2O3 films and powders were prepared by a straightforward aqueous particulate sol-gel route. Titanium (IV) isopropoxide and aluminum chloride were used as precursors, and hydroxypropyl cellulose was used as a polymeric fugitive agent in order to increase the porosity. The effect of Al:Ti molar ratio was studied on the crystallization behavior of the products. X-ray diffraction (XRD) revealed that the powders crystallized at 800°C, containing anatase-TiO2, rutile-TiO2 and cubic-Al2O3 phases. Furthermore, it was found that Al2O3 retarded the anatase to rutile transformation. Transmission electron microscope (TEM) image showed that one of the smallest crystallite sizes was...