Sharif Digital Repository

Pure tin oxide nanoparticles ware synthesized via Co-precipitation method. The as-synthesized nanoparticles were characterized by Fourier transform infrared spectroscopy (FTIR), thermo-gravimetric analysis (TGA), X-ray diffraction (XRD) and diffuse reflectance spectroscopy (DRS). X-ray diffraction shows that tetrahedral shaped nanoparticles of crystallite size 47.35nm were prepared successfully. The crystallinity was established due the reduction in distortion ratio and dislocation density. The value of strain showed that the nanoparticles fabricated were of high stability. The direct and indirect optical band gap of as-synthesized SnO2 nanoparticles were determined from the reflectance... 

In this researchC-N-Y tri-doped TiO2 nanopowders were synthesized by the sol-gel method. TheC- N-Y Ti O2 photo-catalyst was prepared using hexamine and yttrium nitrate Hexahydrate as the dopant precursors. Methyl-orange (MO) was used to study the photocatalytic performance of the doped Ti O2 underUVirradiation. The synthesized samples were characterized by x-ray diffraction, x-ray photoelectron spectroscopy,UV-vis diffuse reflectance spectroscopy, Fourier transform infrared spectroscopy, Transmission electron microscopy, Photoluminescence and Field emission scanning electron microscopy. The tri-doped sample with8%N, 0.4% Y and 1.5%Cexhibited enhanced photocatalytic efficiencies. After 100... 

The band gap offset is an effect of coordination numbers (CNs) of atom reduction at the edge of transversal cross-section of Silicon nanowires (SiNWs). In this paper, a hierarchical multi-scale technique is developed to model the edge effect on the band gap shift of SiNWs since the geometric effect is dominant in the energy gap due to the appearance of strain in the self-equilibrium state. The multi-scale model is performed based on the molecular dynamics approach and finite element method for the micro- (atomistic) and macro-scale levels, respectively. The Cauchy–Born (CB) hypothesis is used to relate the atomic positions to the continuum field through the deformation gradient. Finally, the... 

A novel current reference with low temperature and supply sensitivity and without any external component has been developed in a 0.25 μm mixed-mode process. The circuit is based on a bandgap reference (BGR) voltage and a CMOS circuit similar to a beta multiplier. An NMOS transistor in triode region has been used in place of a resistor in conventional beta multiplier to achieve a current which has a negative temperature coefficient and only oxide thickness dependent. The BGR voltage has a positive temperature coefficient to cancel the negative temperature coefficient of the beta multiplier. The simulation results using Bsim3v3 model show max-to-min fluctuation of less than 1 % over a... 

The band gap offset is an effect of coordination numbers (CNs) of atom reduction at the edge of transversal cross-section of Silicon nanowires (SiNWs). In this paper, a hierarchical multi-scale technique is developed to model the edge effect on the band gap shift of SiNWs since the geometric effect is dominant in the energy gap due to the appearance of strain in the self-equilibrium state. The multi-scale model is performed based on the molecular dynamics approach and finite element method for the micro- (atomistic) and macro-scale levels, respectively. The Cauchy-Born (CB) hypothesis is used to relate the atomic positions to the continuum field through the deformation gradient. Finally, the... 

Graphene, a recently discovered form of carbon, has received much attention for possible applications in nanoelectronics, due to its excellent carrier transport properties [1]. Graphene nanoribbons (GNRs) are thin strips of graphene, where the electronic properties depend on the chirality of the edge and the width of the ribbon. Zigzag GNRs (ZGNRs) show metalic behavior, whereas armchair GNRs (AGNRs) are semiconductors and their band-gap is inversely proportional to their width [2]. Therefore, narrow AGNRs have been recently suggested as a material for transistor channels. However, line edge roughness and substrate impurities can significantly degrade the ballistic transport in AGNRs,... 

We show a methodology for how to construct Dirac points that occur at the corners of Brillouin zone as the Photonic counterparts of graphene. We use a triangular lattice with circular holes on a silicon substrate to create a Coupled Photonic Crystal Resonator Array (CPCRA) which its cavity resonators play the role of carbon atoms in graphene. At first we draw the band structure of our CPCRA using the tight-binding method. For this purpose we first designed a cavity which its resonant frequency is approximately at the middle of the first H-polarization band gap of the basis triangular lattice. Then we obtained dipole modes and magnetic field distribution of this cavity using the Finite... 

The effect of spin dependent recombination on the transport properties of magnetic semiconductors is investigated theoretically. In particular, for p -type direct band gap semiconductors, a theory based on classic Shockley equations is formulated. In this theory the density of spin and charge has been evaluated analytically by solving the diffusive transport equation and it is shown that the difference between recombination rates affect the lifetimes of spin and charge significantly. It is also demonstrated that a considerable spin charge coupling occur. Application of this theory to pure band to band recombination process is discussed. © 2009 American Institute of Physics  

We have performed a numerical solution for band structure of an Abrikosov vortex lattice in type-II superconductors forming a periodic array in two dimensions for applications of incorporating the photonic crystals concept into superconducting materials with possibilities for optical electronics. The implemented numerical method is based on the extensive numerical solution of the Ginzburg-Landau equation for calculating the parameters of the two-fluid model and obtaining the band structure from the permittivity, which depends on the above parameters and the frequency. This is while the characteristics of such crystals highly vary with an externally applied static normal magnetic field,... 

We studied the effect of target annealing temperature on optical and structural properties and composition of CdS thin films prepared by pulsed Nd:YAG laser. Deposited samples from annealed targets at 300 °C showed a mixed cubic and hexagonal structure, a band gap of about 2.56 eV and Cd/S ratio equal 1. This ratio increased to 2.40 and its band gap decreased to 2.46 eV when the sample was annealed at 500 °C for 1 h in air. However, films prepared from annealed targets at 500 °C became dark due to existence of polymorphous phase of CdO. Films changed to transparent yellow color with a hexagonal CdS structure and some peaks related to CdO after annealing above 250 °C in air. Its band gap...