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    Design of a 2-12-GHz bidirectional distributed amplifier in a 0.18- mu m CMOS technology

    , Article IEEE Transactions on Microwave Theory and Techniques ; Volume 67, Issue 2 , 2019 , Pages 754-764 ; 00189480 (ISSN) Alizadeh, A ; Meghdadi, M ; Yaghoobi, M ; Medi, A ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2019
    Abstract
    This paper presents the design and implementation of a bidirectional distributed amplifier (BDDA) in a 0.18- boldsymbol mu ext{m} CMOS process. The performance of the BDDA is theoretically analyzed, and the optimum number of gain stages ( n-{ ext {opt}} ), maximum achievable power gain ( G-{P} ), and circuit bandwidth are formulated. In addition, a new formula for proper choice of the number of DA stages (i.e., n ) is offered where dc-power consumption of the circuit ( P-{ ext {dc}} ) is also considered. This formula optimizes G-{P}/P-{ ext {dc}} , and it is preferred over the conventional n-{ ext {opt}} formula. To validate the theoretical analyses, a 2-12-GHz BDDA with high output 1-dB... 

    A 6-Bit CMOS phase shifter for S - Band

    , Article IEEE Transactions on Microwave Theory and Techniques ; Volume 58, Issue 12 PART 1 , 2010 , Pages 3519-3526 ; 00189480 (ISSN) Meghdadi, M ; Azizi, M ; Kiani, M ; Medi, A ; Atarodi, M ; Sharif University of Technology
    Abstract
    A 6-bit passive phase shifter for 2.5- to 3.2-GHz frequency band has been designed and implemented in a standard 0.18- μm CMOS technology. A new switched-network topology has been proposed for implementing the 5.625 ° phase shift step. The insertion loss of the circuit is compensated with an on-chip bidirectional amplifier. The measured return losses of the circuit are better than 8 dB with output 1-dB compression point of +9.5 dBm in the transmit mode and noise figure of 7.1 dB in the receive mode. The fabricated phase shifter demonstrates an average rms phase error of less than 2° over the entire operation bandwidth, which makes it suitable for high-precision applications