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Structural ordering, morphology and optical properties of amorphous AlxIn1- xN thin films grown by plasma-assisted dual source reactive evaporation
, Article Journal of Alloys and Compounds ; Volume 632 , May , 2015 , Pages 741-747 ; 09258388 (ISSN) ; Ganesh, V ; Mehdipour, H ; Nazarudin, N. F. F ; Goh, B. T ; Shuhaimi, A ; Rahman, S. A ; Sharif University of Technology
Elsevier Ltd
2015
Abstract
Amorphous aluminum indium nitride (AlxIn1- xN) thin films were deposited on quartz substrates by plasma-assisted dual source reactive evaporation system. In-rich (x = 0.10 and 0.18) and Al-rich (x = 0.60 and 0.64) films were prepared by simply varying an AC voltage applied to indium wire. The X-ray-diffraction patterns revealed a small broad peak assigned to Al0.10In0.90N (0 0 2) plane, but no perceivable peaks assigned to crystalline AlxIn1- xN were observed for the films with x = 0.18, 0.60 and 0.64. The morphology of the film was changed from clusters of small grains to uniformly shaped particles with decrease of x. The band gap energy of the films increased from 1.08 eV to 2.50 eV as the...