Sharif Digital Repository

Small high-quality Au/p-Si Schottky barrier diodes (SBDs) with extremely low reverse leakage current using wet lithography were produced. Their effective barrier heights (BHs) and ideality factors from currentvoltage (IV) characteristics were measured by a conducting probe atomic force microscope (C-AFM). In spite of identical preparation of the diodes there was a diode-to-diode variation in ideality factor and barrier height parameters. By extrapolating the plots the built-in potential of the Au/p-Si contact was obtained as Vbi=0.5425 V and the barrier height value (ΦB(C-V)) was calculated to be ΦB(C-V)=0.7145 V for Au/p-Si for a typical 100 μm diode diameters. In the present work the... 

Small high-quality Au/P-Si Schottky barrier diodes (SBDs) with an extremely low reverse leakage current using wet lithography were produced. Their effective barrier heights (BHs) and ideality factors from current-voltage (I -V) characteristics were measured by a conducting probe atomic force microscope (C-AFM). In spite of the identical preparation of the diodes there was a diode-to-diode variation in ideality factor and barrier height parameters. By extrapolating the plots the built in potential of the Au /p-Si contact was obtained as Vbi D 0:5425 V and the barrier height value φB(C-V) was calculated to be φB(C-V) D 0:7145 V for Au/p-Si. It is found that for the diodes with diameters...