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Floating bulk cascode class-e power amplifier
, Article IEEE Transactions on Circuits and Systems II: Express Briefs ; 2018 ; 15497747 (ISSN) ; Toofan, S ; Lotfi, H ; Sharif University of Technology
Institute of Electrical and Electronics Engineers Inc
2018
Abstract
In this paper, the switching behavior of the cascode topology is improved through the floating bulk (FB) technique. Although the cascode structure has the advantage of reducing voltage stress on transistors, its parasitic elements increase power loss. The FB technique has been proposed to alleviate the power loss in the cascode class-E PA topology which results in enhancement of power added efficiency (PAE). In this method, the bulk of the common-gate (CG) transistor is connected to the ground through a resistor. As a result, the parasitic capacitances between the drain and source of the CG transistor create a new path of current that accelerates charging of parasitic capacitance at the...
Floating bulk cascode Class-E power amplifier
, Article IEEE Transactions on Circuits and Systems II: Express Briefs ; Volume 66, Issue 4 , 2019 , Pages 537-541 ; 15497747 (ISSN) ; Toofan, S ; Lotfi, H ; Sharif University of Technology
Institute of Electrical and Electronics Engineers Inc
2019
Abstract
In this brief, the switching behavior of the cascode topology is improved through the floating bulk (FB) technique. Although the cascode structure has the advantage of reducing voltage stress on transistors, its parasitic elements increase power loss. The FB technique has been proposed to alleviate the power loss in the cascode class-E PA topology which results in enhancement of power added efficiency (PAE). In this method, the bulk of the common-gate (CG) transistor is connected to the ground through a resistor. As a result, the parasitic capacitances between the drain and source of the CG transistor create a new path of current that accelerates charging of parasitic capacitance at the...