Sharif Digital Repository

Free-standing TiO2 nanotube array (TNA) films were fabricated via two-step anodization of titanium sheet. The electrolyte consisted of DI water and ethylene glycol (99.9%, Merck) solution with volume ratio of 10:90, containing 0.5 M NH4F. Then, a few drops of 1M H3PO4 aquaes solution have been added to adjust pH at 5.7. The anodization process was performed at optimized applied voltage of 60 V for 200 min. Indeed it does in two-step for 50 and 150 min, and samples were sonicated of 40s between two steps. Then, to crystallize the grown structures, they were annealed in air at 500˚C for 80 minutes. Surface of TNA was modified by sequential-chemical bath deposition (S-CBD) method to fabricate... 

Zinc oxide is a wide band gap semiconductor material with wide applications as conductive oxides used in electro-optical devices. Thin films of doped zinc oxide (e.g. Al:ZnO, B:ZnO) are already used in thin-film solar cell technologies as electrodes. Chemical bath deposition (CBD) is a promising method for fabricating transparent and conductive ZnO layers at low temperatures (<100 °C) on nonconductive and temperature-sensitive substrates. Having a natural crystal habit, ZnO readily grows rod-like arrays when grown in an aqueous solution by CBD, posing challenges when attempting to deposit dense and conductive layers. The purpose of this study was to deposit dense and conductive zinc oxide... 

In this research, first thin films with nanostructures of titanium nanotube arrays (TNAs) synthesized by anodization under different applied voltage (20- 60 V) and different reaction times (120 and 200 min). The electrolyte solution for synthesizing the samples contained 90% ethylene glycol (EG), 10% DI water, 0.1 M NHR4RF and a little HR3RPOR4R to reach the pH to 5.6. The synthesized samples crystallized under annealing treatment at 500 °C (with heating rate of 9.5 °CminP -1 P). The scanning electron microscopy (SEM) analysis was indicate that the length and the inner diameter of the nanotubes have increased from 1.6 μm and 67 nm (for 30 V anodization and for 2h) to 4.2 μm and 125 nm (for...