Loading...
Search for: cmos-transceivers
0.012 seconds

    Design and calibration procedure of a proposed V-band antenna array on fused silica technology intended for MIMO applications

    , Article International Journal of Microwave and Optical Technology ; Volume 13, Issue 4 , 2018 , Pages 317-329 ; 15530396 (ISSN) Salarpour, M ; Farzaneh, F ; Staszewski, R. B ; Sharif University of Technology
    International Academy of Microwave and Optical Technology (IAMOT)  2018
    Abstract
    A coplanar-fed wideband antenna array system to characterize MIMO channels in the 60 GHz band is proposed. The array consists of six U-slot patch elements with half-wavelength separation and is fed independently by individual transceivers. The system is designed and simulated on fused silica substrate to be integrated easily with RFICs and to achieve fine fabrication resolution (1um) for accurate mm-wave measurements. It can provide 11dBi peak gain at broadside and beam steering up to ±40° tilted from broadside over 57-63 GHz band. A new on-wafer calibration technique is developed to balance the amplitude and phase of all transceivers at the input of the array system which realizes high... 

    A fully integrated 0.18-μm CMOS transceiver chip for X-band phased-array systems

    , Article IEEE Transactions on Microwave Theory and Techniques ; Volume 60, Issue 7 , 2012 , Pages 2192-2202 ; 00189480 (ISSN) Gharibdoust, K ; Mousavi, N ; Kalantari, M ; Moezzi, M ; Medi, A ; Sharif University of Technology
    Abstract
    An X-band core chip is designed and fabricated in 0.18-μm CMOS technology, which can significantly reduce the monolithic microwave integrated circuit count required for realizing an active beam-former T/R module. The core chip consists of two RX/TX paths, each of which includes a 6-b phase shifter, a 6-b attenuator, along with two input and output amplifiers. A new architecture for realizing such a core chip system and a low loss circuit for 5.625° phase shift block are proposed. The overall rms phase and gain errors are better than 2° and 0.25 dB, respectively, in both RX/TX paths. The gain of each path is around 12 dB, while the output 1-dB compression point is higher than 10 dBm over the... 

    A reconfigurable highly-linear CMOS transceiver core chip for X-band phased arrays

    , Article AEU-International Journal of Electronics and Communications ; Volume 114 , February , 2020 Meghdadi, M ; Lotfi, H ; Medi, A ; Sharif University of Technology
    Elsevier GmbH  2020
    Abstract
    This paper presents a highly-linear transceiver core chip for X-band phased-array systems with two RX and one TX channels. Implemented in a standard 0.18-μm CMOS technology, the core chip provides 6-bit phase control (with rms error <2°) and 6-bit gain control (with rms error <0.6 dB) both within the 8.5–11.5 GHz frequency band. Improved accuracy is also available by digital calibration in narrowband applications. The receivers achieve a gain of 13.5 dB, an IIP3 of +10.3 dBm, and a noise figure of 8.2 dB, while drawing 170 mA per channel from the 3.3 V supply. The chip also provides an additional low-gain mode which further enhances IIP3 to +19.1 dBm and the input-referred P1dB to +11.4 dBm....