Sharif Digital Repository

Field-effect transistors have been widely used to study electronic transport and doping in colloidal quantum dot solids to great effect. However, the full power of these devices to elucidate the electronic structure of materials has yet to be harnessed. Here, we deploy nanodielectric field-effect transistors to map the energy landscape within the band gap of a colloidal quantum dot solid. We exploit the self-limiting nature of the potentiostatic anodization growth mode to produce the thinnest usable gate dielectric, subject to our voltage breakdown requirements defined by the Fermi sweep range of interest. Lead sulfide colloidal quantum dots are applied as the active region and are treated... 

A solution-processed, bottom-up nanowire network electrode is developed and employed in a bulk heterojunction colloidal quantum dot solar cell. The electrode features a ZnO template which is converted into locally connected, infi ltratable TiO2 nanowires. The new electrode allows the application of a thicker light absorbing fi lm without compromising the charge extraction, as reported by Edward H. Sargent, Ghassan Jabbour, and co-workers on page 1769. The frontispiece shows schematically the electrode shape and the resultant device architecture  

Solution-processed quantum dots (QDs) have attracted significant attention for the low-cost fabrication of optoelectronic devices. Here, we synthesized PbS QDs via hot injection method and passivated the trap states by using short thiols and dopant elements for photovoltaic application. In order to study the effect of dopants on photovoltaic application, PbS QDs were doped by using three different cations: Cadmium, Calcium, and Zinc. We utilized Time resolvel Photoluminescence measurement to study the carriers lifetime for different samples and found that the carriers life time increases ∼80% by using Cd as a dopant compared with undoped sample. In addition, the results of J-V measurement... 

The type of passivating ligands and the ligand exchange method influence the quality of lead sulfide quantum dot films. This imparts on the efficiency of optoelectronic devices. To get a compact arrangement of the nanocrystals in a thin film (⁓100 nm) via self-assembling, we used organic-inorganic perovskites with mixed halides for the solid-state exchange of oleic acid ligands on PbS QDs (⁓ 4 nm). Formamidinium lead halides FAPbIxBr3-x (x= 3,2,1,0) were used. X-ray spectroscopy shows that successful replacement of oleic acid with FA happens by short immersion of the films (2 min) in the solution. Transmission electron microscopy shows that nano-scale cracks, short-range ordering, and fusion... 

Herein, a solution-processed, bottom-up-fabricated, nanowire network electrode is developed. This electrode features a ZnO template which is converted into locally connected, infiltratable, TiO2 nanowires. This new electrode is used to build a depleted bulk heterojunction solar cell employing hybrid-passivated colloidal quantum dots. The new electrode allows the application of a thicker, and thus more light-absorbing, colloidal quantum dot active layer, from which charge extraction of an efficiency comparable to that obtained from a thinner, planar device could be obtained  

Herein, a simple and novel method was used to synthesize a new structure of graphene which can be called hollow graphene. First, the ZnO-Graphene QDs synthesized by solution method and then ZnO QDs were dissolved from this structure using an acidic solution to obtain hollow structure of graphene. Afterward, this structure was used in PbS QDs solar cell in order to improve the transport of electron and decrease the recombination of the carriers. A power conversion efficiency of 5.3% was obtained using hollow graphene as a fast electron extraction layer due to the enhancement of EQE and current density. The improvement of PCE in this device was corresponded to efficient photosensitized... 

This paper presents solid-state ligand exchange of spin-coated colloidal lead sulfide quantum dot (PbS QD) films by methylammonium iodide (MAI) and integration of them in depleted heterojunction solar (DHS) devices having an antireflecting (AR) nanocone plastic structure. Time-resolved photoluminescence measurements determine a shorter lifetime of the charge carries on a semiconductor (TiO2) electron transfer layer for the MAI-passivated QD films as compared with those with long-chain aliphatic or short thiol ligands. Consequently, the DHS device yields improved power conversion efficiency (>125%) relative to oleic-acid-passivated PbS QD films. Using anodized aluminum oxide templates, an... 

PbS quantum dots (QDs) have been extensively studied for photovoltaic applications, thanks to their facile and low-cost fabrication processing and interesting physical properties such as size dependent and tunable band gap. However, the performance of PbS QD-based solar cells is highly sensitive to the humidity level in the ambient air, which is a serious obstacle toward its practical applications. Although it has been previously revealed that oxygen doping of the hole transporting layer can mitigate the cause of this issue, the suggested methods to recover the device performance are time-consuming and relatively costly. Here, we report a low-power oxygen plasma treatment as a rapid and... 

The high mobility of charge carriers in graphene (G) together with the ease of processing and tunable optical properties of colloidal quantum dots (CQD) has provided high-performance hybrids for the next generation of phototransistors. In order to get a higher quality film of PbS QDs, understanding the effect of the ligand exchange method is critical. So, to improve the interdot electronic coupling, we propose a new conducting ligand to prepare a dense and self-assembled active layer of FAPbI3-PbS quantum dots on G/Si/SiO2substrates. Quantum dot (QD) nanocrystalline films were preparedviatwo different procedures: liquid phase ligand exchange (LPE) and solid phase ligand exchange (SPE). SPE... 

Field-effect transistors have been widely used to study electronic transport and doping in colloidal quantum dot solids to great effect. However, the full power of these devices to elucidate the electronic structure of materials has yet to be harnessed. Here, we deploy nanodielectric field-effect transistors to map the energy landscape within the band gap of a colloidal quantum dot solid. We exploit the self-limiting nature of the potentiostatic anodization growth mode to produce the thinnest usable gate dielectric, subject to our voltage breakdown requirements defined by the Fermi sweep range of interest. Lead sulfide colloidal quantum dots are applied as the active region and are treated... 

Colloidal quantum dot solar cells have recently attracted significant attention due to their low-processing cost and surging photovoltaic performance. In this paper, a novel, reproducible, and simple solution-based process based on supercritical fluid toluene is presented for in situ growth and deposition PbS nanocrystals with oleic-acid passivation. A lead precursor containing sulfur was mixed with oleic acid in toluene and processed in a supercritical fluid condition at different temperatures of 140, 270 and 330 °C for 20 min. The quantum dots were deposited on a fluorine-doped tin oxide glass substrate inside the supercritical reactor. Transmission electron microscopy, X-ray diffraction,...