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    Concurrent design of Schottky diode limiter and LNA

    , Article Analog Integrated Circuits and Signal Processing ; Volume 107, Issue 3 , 2021 , Pages 543-550 ; 09251030 (ISSN) Alavi Lavasani, S. H ; Medi, A ; Sharif University of Technology
    Springer  2021
    Abstract
    In this paper concurrent design of Schottky diode based limiter and low noise amplifier (LNA), based on noise matching, is investigated to achieve minimum noise figure (NF) of the receiver chain. In design procedure of the LNA, the noise figure is minimum, gain at central frequency is 14.5 dB, and limiter structure tolerates up to 5 W continuous wave input power. In the proposed concurrent design, a pass-band filter is applied at the LNA output to attenuate undesired out-of-band signals. In the proposed design, the limiter-LNA is implemented with a 0.25 µm gate length AlGaAs/InGaAs pHEMT process. Measured noise figure of chain is 2.7 dB and average gain over 8.5–9.5 GHz frequency range and... 

    Concurrent design of Schottky diode limiter and LNA

    , Article Analog Integrated Circuits and Signal Processing ; Volume 107, Issue 3 , 2021 , Pages 543-550 ; 09251030 (ISSN) Alavi Lavasani, S. H ; Medi, A ; Sharif University of Technology
    Springer  2021
    Abstract
    In this paper concurrent design of Schottky diode based limiter and low noise amplifier (LNA), based on noise matching, is investigated to achieve minimum noise figure (NF) of the receiver chain. In design procedure of the LNA, the noise figure is minimum, gain at central frequency is 14.5 dB, and limiter structure tolerates up to 5 W continuous wave input power. In the proposed concurrent design, a pass-band filter is applied at the LNA output to attenuate undesired out-of-band signals. In the proposed design, the limiter-LNA is implemented with a 0.25 µm gate length AlGaAs/InGaAs pHEMT process. Measured noise figure of chain is 2.7 dB and average gain over 8.5–9.5 GHz frequency range and... 

    Codesign of ka-band integrated limiter and low noise amplifier

    , Article IEEE Transactions on Microwave Theory and Techniques ; Volume 64, Issue 9 , 2016 , Pages 2843-2852 ; 00189480 (ISSN) Mahmoudidaryan, P ; Medi, A ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2016
    Abstract
    In this paper, a thorough design procedure for concurrent design of integrated antiparallel Schottky-diode-based limiter and low noise amplifier (LNA) is presented. The optimum number of limiter branches, the size and number of diodes in each branch, width of the transmission line loaded by diode branches, and design considerations for input transistor of the LNA are discussed in detail. To improve power handling of the limiter with a minimum impact on overall noise figure (NF), a novel limiter structure is proposed where transistors are utilized in a limiter topology. A design procedure is also introduced for the transistor-based limiter-LNA. Developed methodologies are employed to design...