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In manufacturing amorphous silicon solar cells, thin films are deposited at high temperatures (200-400 °C) on a thick substrate using sputtering and plasma enhanced chemical vapor deposition (PECVD) methods. Since the thin films and substrate have different thermal expansion coefficients, cooling the system from deposition temperature to room temperature induces thermal residual stresses in both the films and substrate. In addition, these stresses, especially those having been induced in the amorphous silicon layer can change the carrier mobility and band gap energy of the silicon and consequently affect the solar cell efficiency. In this paper, a 2D finite element model is proposed to...