Sharif Digital Repository

Porous silicon (PS) is widely utilized in gas sensors. Palladium is a good choice to sensitize the surface of PS to hydrogen. Ideally for highest sensitivity of the sensor, all the pores of PS should be completely covered with palladium. Rutherford backscattering spectroscopy (RBS) technique is routinely used to determine depth profile of elements in thin layers. By using microbeam analysis as a complementary technique, we clearly observed the lateral image of penetrated Pd in depth. In this work, we used electrochemically anodized-silicon wafer doped with Pd by the electroless process. In our analysis, we intentionally characterized both the area of PS where Electric Field is applied during... 

Growth of thin layers of compound semiconductors such as GaAs and Al x Ga1-x As was obtained by Liquid Phase Epitaxy (LPE) at 838-828 ° C in thickness range of 0.1-4.3 μm which was estimated by Scanning Electron Microscopy (SEM). By Secondary Ion Mass Spectroscopy (SIMS) measurements, type of impurity atoms and their density and uniformity with respect to thickness were measured. In this way we are sure that variation of impurity atoms such as Si, Te, Sn and Ge indicates that epilayers were formed uniformly and it demonstrated that the LPE growth was a suitable way to obtain a good quality of epitaxy layers. Amount of composition parameter x in the compound semiconductor AlxGa1-xAs was... 

Photodegradation of Escherichia coli bacteria in presence of Ag-TiO2/Ag/a-TiO2 nanocomposite film with an effective storage of silver nanoparticles was investigated in the visible and the solar light irradiations. The nanocomposite film was synthesized by sol-gel deposition of 30 nm Ag-TiO2 layer on ∼200 nm anatase(a-)TiO2 film previously doped by silver nanoparticles. Both Ag/a-TiO2 and Ag-TiO2/Ag/a-TiO2 films were transparent with a SPR absorption band at 412 nm. Depth profile X-ray photoelectron spectroscopy showed metallic silver nanoparticles with diameter of 30 nm and fcc crystalline structure were self-accumulated on the film surface at depth of 5 nm of the TiO2 layer and also at the...