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A comprehensive survey on UHF RFID rectifiers and investigating the effect of device threshold voltage on the rectifier performance
, Article Analog Integrated Circuits and Signal Processing ; Volume 96, Issue 1 , 2018 , Pages 21-38 ; 09251030 (ISSN) ; Sheikhaei, S ; Fotowat Ahmady, A ; Forouzandeh, B ; Sharif University of Technology
Springer New York LLC
2018
Abstract
Rectifiers are an integral part of power harvesting systems. In this paper, the literature on RF power rectifiers is surveyed, starting from the well-known voltage doubler. Effects of using low turn-on voltage devices on forward and reverse losses, and therefore, on conversion efficiency, is discussed. Samples of rectifiers with external devices, such as Schottky diodes are presented. Idea of external Vth cancellation through a rechargeable battery, self Vth cancellation, and floating gate transistors with charge injection onto the gates are demonstrated. Then, standard bridge rectifier and its modified versions, including Vth cancellation technique, are explained. Using low voltage devices...
A low-power, multichannel gated oscillator-based CDR for short-haul applications
, Article 2005 International Symposium on Low Power Electronics and Design, San Diego, CA, 8 August 2005 through 10 August 2005 ; 2005 , Pages 107-110 ; 15334678 (ISSN) ; Muller, P ; Atarodi, M ; Leblebici, Y ; Sharif University of Technology
Institute of Electrical and Electronics Engineers Inc
2005
Abstract
A gated current-controlled oscillator (GCCO) based topology is used to implement a low-power multi-channel clock and data recovery (CDR) system in a 0.18um digital CMOS technology. A systematic approach is presented to design a reliable and low-power system based on the required specifications. Behavioral simulations are also used to estimate the achievable bit error rate (BER), jitter tolerance (JTOL), and frequency offset tolerance (FTOL) of the proposed CDR. Using a single 1.8V supply voltage, the proposed 20Gbps 8-channel CDR consumes only 70.2mW or 3.51mW/Channel/Gbps while occupies 0.045mm2 silicon area. Copyright 2005 ACM