Sharif Digital Repository

Based on the observation that dynamic occurrence of zeros in the cache access stream and cache-resident memory values of ordinary programs exhibit a strong bias towards zero, this paper presents a novel CMOS five-transistor SRAM cell (5T SRAM cell) for very high density and low power cache applications. This cell retains its data with leakage current and positive feedback without refresh cycle. Novel 5T SRAM cell uses one word-line and one bit-line and extra read-line control. The new cell size is 17% smaller than a conventional six-transistor SRAM cell using same design rules with no performance degradation. Simulation and analytical results show purposed cell has correct operation during... 

Scratch Pad Memory (SPM) is an important part of most modern embedded processors. The use of embedded processors in safety-critical applications implies including fault tolerance in the design of SPM. This paper proposes a method, called FTSPM, which integrates a multi-priority mapping algorithm with a hybrid SPM structure. The proposed structure divides SPM into three parts: 1) a part is equipped with Non-Volatile Memory (NVM) which is immune against soft errors, 2) a part is equipped with Error-Correcting Code, and 3) a part is equipped with parity. The proposed mapping algorithm is responsible to distribute the program blocks among the above three parts with regards to their vulnerability... 

Spin-transfer-torque RAMs (STT-RAMs) are the most promising technology for replacing Static RAMs (SRAMs) in on-chip caches. One of the major problems in STT-RAMs is the high error rate due to stochastic switching in write operations. Cache replacement algorithms have a major role in the number of write operations into the caches. Due to this fact, it is necessary to redesign cache replacement algorithms to consider the new challenges of STT-RAM caches. This paper proposes a cache replacement algorithm, which is called least error rate (LER) , to reduce the error rate in L2 caches. The main idea is to place the incoming block in a line that incurs the minimum error rate in write operation.... 

SRAM-based scratchpad memories (SPMs) used in embedded systems impose high leakage power. Designing SPMs based on non-volatile memories (NVMs) were proposed as NVMs have negligible leakage power. The main problem of utilizing NVMs across the SPM is their limited number of write cycles (endurance). This problem threatens the reliability of NVM-based SPMs. To alleviate the problem of limited endurance in NVM-based SPMs, this paper proposes a method, called overwrite purging through in-execution memory address snooping (OPTIMAS). The main idea behind the proposed method is to control the lifetime of NVM-based SPMs, directly by a hardware unit, outside of the SPM mapping algorithm. This idea... 

This paper proposes a low power SRAM based on five transistor SRAM cell. Proposed SRAM uses novel word-line decoding such that, during a read/write operation, only selected cell is connected to bit-line when one row is selected whereas, in conventional SRAM (CV-SRAM), all cells in selected row connected to their bit-lines, which in turn develops differential voltages across all bit-lines, and this makes energy consumption on unselected bit-lines. Proposed SRAM uses one bit-line and thus has lower bit-line leakage compared to CV-SRAM. Furthermore, the proposed SRAM incurs no area overhead, and has comparable read/write performance versus the CV-SRAM. Simulation results in standard 0.25μm CMOS...