Sharif Digital Repository

Proper functioning of electrical connectors used in high oscillation is of great importance. Vibrations in connector pins cause stress and electrical resistance variations in the contact surface. In the present paper, the impacts of vibrational loads on electrical connectors is being modeled using the finite element method, and the electrical resistance oscillations of the connectors will be examined. Ultimately, the parameters affecting the electrical resistance oscillations of contacts will be determined and their relations with oscillations in electrical resistance are specified as well. © 2018 by the authors; licensee Growing Science, Canada, 2018 Growing Science Ltd. All rights reserved... 

In the present study, SiC samples with 3, 5, 7.5 and 10 wt% Al2O3–Y2O3 as additives were made by powder metallurgy method, then sintering was performed by microwave-assisted process. β–SiC samples sintering was performed for 100 min. The highest sintered relative density 91.06% was achieved at 10 wt% additives content. The maximum values of hardness and toughness were up to 23.3 GPa and 6.14 MPa.m− 1/2. α–SiC and α–SiC/β–SiC samples sintering was performed for 120 min. The maximum value of density and hardness were up to 96.38% T.D and 24.88 GPa in α–SiC with 7.5 wt% additives, whereas the highest toughness was achieved at 10 wt% additives content in β–SiC samples. The α–SiC samples... 

The spin-polarized transport is investigated in a new type of magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer. Based on the transfer matrix method and the nearly-free-electron approximation the dependence of the tunnel magnetoresistance (TMR) and electron-spin polarization on the nonmagnetic layer thickness and the applied bias voltage are studied theoretically. The TMR and spin polarization show an oscillatory behaviour as a function of the spacer thickness and the bias voltage. The oscillations originate from the quantum well states in the spacer, while the existence of the magnetic barrier gives rise... 

We compare Cu/M/SiO2 (M=Cr,V and Ta) multilayers that were deposited on Si substrates. Sample resistance measurements were carried out during annealing in 80% N2+20% H2, N2 and Ar environments. Resistivity measurements, SEM observations, RBS and AES spectroscopies from annealed samples showed good diffusion barrier properties for Cr and V but rather poor properties for Ta buffer layers. This is due to the amorphous nature of Cr films and formation of a continuous Cu overlayer. SEM observation also showed granular structure for Cu/V and Cu/Ta with grain sizes of about 500 and 1000 Å respectively. However, shallow nitrogen implantation in Cu/V samples and DC biasing for Cu/Ta layers during... 

Effects of graphene, tool rotational speed and pass number were studied on the reliability and electrical resistance of the aluminum to copper friction stir welds. Addition of graphene was an effective solution to overcome the increase in the electrical resistance of the aluminum/copper joints. Indeed, presence of graphene decreased the electrical resistance of the joints to the values comparable with that of the copper base metal. However, joint tensile strength was not affected significantly by graphene. Decrease in the tool rotational speed improved the dispersion of the graphene particles and tensile strength, while reduced the electrical resistance. Tensile strength of the joint reached... 

The goal of this paper is to describe a simple method for the automated data acquisition and analysis of data taken by programmable instruments. Device controls and communication method are explained and some typical illustrative examples showing the potential applications of the method in real experiments are presented. This method offers a quick and flexible way to control many instruments by using a multi-device arrangement of a stacking method in a parallel operation. The General-Purpose Interface Bus (GPIB) is used here for remote control of the devices. By using Excel and Visa interactive programs and using GPIB interface, easy communication and data transfer between instruments and a... 

Electrical behavior of hybrid conductive composites made of phenolic resin, graphite woven, glass woven and graphite nano powder has been studied for the first time in the present research to apply as collecting plates in electro static precipitators. To this purpose, two types of four-layer composites smeared with phenolic resin by different amounts of graphite nano powder then produced at 120°C and 200 bars with proper curing cycle. Finally, electrical resistivity of all the plates undergoing impact loading after different rapping cycles was measured by means of a repetitive rapping tester system particularly manufactured for this task. This study performs changes in mechanical behavior of... 

In this research, we used the scanning tunneling spectroscopy (STS) technique to probe the local electrical properties of the surface of meso-porous silicon and its substrate, including local density of states (DOS) in air and in methanol environment to increase our knowledge of sensing phenomena. Meso-porous silicon was prepared on p+-type Si which has high sensitivity toward methanol. Observations revealed that while the surface electrical properties of p+-type Si have not sensible change toward methanol, average local density of state of the porous layer increases after the exposure to methanol especially in the E < EF region. Moreover, large number of surface states is produced in band... 

Porous silicon samples obtained from p+-type silicon wafers were impregnated with Pd by electroless process in different conditions. Scanning electron microscopy was used to study the change in the features of the surface after palladium plating. Results showed how the factors like Pd-salt concentration, HCl concentration, temperature of the electroless solution and the time of process affect on the growth and nucleation of Pd particles. Observations demonstrated that illumination-assisted process and pre-oxidation of the surface before process have drastic effect on the growth of palladium. Variation of the electrical resistance in the presence of diluted hydrogen at room temperature... 

In this paper, we present a study on the contribution of silicon nanocrystals to the electrical transport characteristics of large (100 μm × 100 μm) and small (100 nm × 100 nm) metaloxide-semiconductor (MOS) capacitors at room temperature. A layer of silicon nanocrystals is synthesized within the oxide of these capacitors by ultra-low energy ion implantation and annealing. Several features including negative differential resistance (NDR), sharp current peaks and random telegraph signal (RTS) are demonstrated in the current-voltage and current-time characteristics of these capacitors. These features have been associated to charge storage in silicon nanocrystals and to the resulting Coulomb... 

We prepared single-phase polycrystalline Gd1-xPrx Ba2Cu3O7-δ samples with x = 0, 0.10, 0.15, and 0.20. The deoxygenation process of these samples was performed by an annealing method. Electrical resistivity measurements revealed depression of the transition temperature with the increase of x and δ. We calculated the hole concentration in the CuO2 plane for different values of x and δ. A linear dependence of transition temperature and hole concentration in the CuO2 plane was found as a function of 2δ + x. It is proposed that a combination of the localization and filling of holes should be considered as the effective mechanisms for the appearance of the Pr anomaly in HTSCs  

A novel cascode configuration previously presented as a high output resistance load (Fujimori and Sugimoto, 1998) has been investigated and utilized for amplification to achieve higher gain and bandwidth by the authors (Lofti and Atarodi, Proc. ICEE'00, vol.1, pp.83-8, 2000). A low-voltage single-stage opamp using this configuration is designed. Finally, based on this idea a 1.5-V offset- and gain-compensated 5th order switched-capacitor low pass filter with only 150 μA current consumption in a 0.8 μm process is designed. © 2000 IEEE  

In this study the effect of deposition temperature and thickness on the physical properties of carbon films deposited by magnetron sputtering PVD was investigated. The results of Raman spectra and grazing incidence XRD (GIXRD) patterns show that the graphitization increases by increasing the deposition temperature. There is a change in deposition mechanism at 400 °C from amorphous carbon deposition to nano-structured graphite deposition. Also by increasing substrate temperature the electrical resistance of carbon films reduces significantly up to 300 °C and then remains largely constant. High intrinsic compressive stress in low temperature deposited carbon films causes cracks and...