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    Highly formed luminescent oxygen trap states in thermochemically prepared CdS nanocrystals and improvement of the luminescence property

    , Article Synthesis and Reactivity in Inorganic, Metal-Organic and Nano-Metal Chemistry ; Volume 46, Issue 3 , 2016 , Pages 327-333 ; 15533174 (ISSN) Marandi, M ; Amrollahi, R ; Taghavinia, N ; Sharif University of Technology
    Taylor and Francis Inc 
    Abstract
    CdS nanocrystals were prepared through a thermally activated (thermochemical) method. The synthesis was performed in two different oxygen-saturated and Ar purged atmospheres. Na2S2O3 was used as a heat-sensitive source of S in the experiments. Thioglycerol was also applied as the capping agent to restrain the growth. The growth was activated by heating and controlled by solution pH. The results demonstrated a considerably higher luminescence intensity for the synthesis in oxygen-saturated atmosphere. This could show the role of luminescent oxygen trap states created inside the CdS nanocrystals. The improved luminescence was observed for the synthesis at different solution pHs. Nevertheless,... 

    Molecular Dynamics Simulation of Thin Film Growth and Nucleation Processes of Rapid Solidification of Aluminum in Nano-Scale

    , M.Sc. Thesis Sharif University of Technology Solhjoo, Soheil (Author) ; Simchi, Abdolreza (Supervisor) ; Ashuri, Hossein (Supervisor)
    Abstract
    In this project, the melting, solidification and remelting processes and also, the epitaxial growth of thin molten layer on the solidified crystalline substrate is studied using molecular dynamics simulation for the aluminum as an instance for the fcc metals. Sutton-Chen potential is used for energy calculations; the modified version of verlet algorithm is used for determination of position and velocity of atoms; and the berendsen algorithms are used as thermostat and barostat. The effects of pressure and temperature changing rate on the melting and crystallization temperatures and the crystal structure are investigated. The crystal structure of the system is examined using radial... 

    Structure transition of single-texture CoSi 2 nanolayer grown by refractory-interlayer-mediated epitaxy method

    , Article Applied Surface Science ; Volume 253, Issue 5 , 2006 , Pages 2953-2957 ; 01694332 (ISSN) Akhavan, O ; Moshfegh, A. Z ; Sharif University of Technology
    Elsevier  2006
    Abstract
    In this investigation, the crystalline structure of a nanometric CoSi 2 layer, formed in heat treated Co/W x Ta (1-x) /Si(1 0 0) systems, has been studied by XRD analysis. Careful measurements of the diffraction intensities revealed that temporary formation of a metastable diamond cubic structure of CoSi 2 phase, rather than its usual CaF 2 structure, was occurred. It has been shown that formation of this metastable structure depends on the kind of the applied interlayer in addition to the annealing temperature. Among the studied systems with x = 0, 0.25, 0.5, 0.75 and 1, the second and the last systems resulted in growing a (1 0 0) single-texture CoSi 2 layer with the preferred usual CaF 2... 

    Two-dimensional clustering of nanoparticles on the surface of cellulose fibers

    , Article Journal of Physical Chemistry C ; Volume 113, Issue 28 , 2009 , Pages 12022-12027 ; 19327447 (ISSN) Khajeh Aminian, M ; Taghavinia, N ; Irajizad, A ; Mahdavi, M ; Ye, J ; Chavoshi, M ; Vashaei, Z ; Sharif University of Technology
    2009
    Abstract
    Density of surface charges of cellulose fibers and -potential of TiO2 nanoparticles in the solution were measured and controlled by pH. The adsorption and clustering of TiO2 nanoparticles on the surface of cellulose fibers were studied using scanning electron microscopy (SEM) and a scale in different situations of repulsion and attraction between the particles and surface. The experiments show formation of two-dimensional clusters of nanoparticles on the surface. Weight measurement of the adsorbed particles and clusters via the adsorption time results in that there are three stages containing nucleation, two-dimensional growth and saturation for clustering of nanoparticles on the surface.... 

    XPS studies of Cu1-xTlxBa2Ca 2Cu3O10-y superconductor thin films

    , Article Physica C: Superconductivity and its Applications ; Volume 433, Issue 1-2 , 2005 , Pages 21-27 ; 09214534 (ISSN) Khan, N. A ; Khurram, A. A ; Sabeeh, K ; Iraji Zad, A ; Ahadian, M. M ; Sharif University of Technology
    2005
    Abstract
    X-ray photoemission spectroscopy (XPS) of Cu1-xTl xBa2Ca2Cu3O10-δ (Cu1-xTlx-1223) superconductors thin films is studied. These films were prepared by amorphous phase epitaxy method on the SrTiO 3 substrate. This compound has Cu1-xTlxBa 2O4-δ charge reservoir layer and three CuO 2 planes. The atoms in the CuO2 planes have strong covalent bonding, while the some of the atoms in Cu1-xTl xBa2O4-δ charge reservoir, such as oxygen (Oδ) have predominantly secondary bonding and could be removed from the unit cell. The deliberate or inadvertent removal of the oxygen from the unit cell may change the charge state of the constituent atoms in the charge reservoir layer. The charge state of the atoms in... 

    MOD growth of epitaxial cerium oxide buffer layer on LAO substrates for fabrication of c-axis oriented YBCO

    , Article Micro and Nano Letters ; Volume 7, Issue 10 , 2012 , Pages 1008-1010 ; 17500443 (ISSN) Hosseini, M ; Foroughi Abari, F ; Vesaghi, M. A ; Fardmanesh, M ; Sharif University of Technology
    2012
    Abstract
    Epitaxial cerium oxide (CeO2) buffer layer has been grown on lanthanum aluminate (LAO) single crystal substrates for fabrication of c-axis oriented YBa2Cu3O7-x (YBCO). Precursor solution of cerium acetylacetonates with viscosity of 0.6 centipoises was spin coated on the 1×1 cm area LAO substrates. The calcination was carried out by very slow ramp (1°C per minute) until the final temperature of 500°C in oxygen flow to remove most of the organic compounds. The final heat treatment has been done at 780°C by a ramp of 20° per minute in gas flow of mixed argon-oxygen with 5 Pa partial pressure of oxygen. The thickness of the deposited CeO2 buffer layer was 20 nm. Then, 100 nm thick YBCO film was... 

    Growth of GaAs/AlxGa1- xAs layers by LPE method and their characterization by SIMS

    , Article EPJ Applied Physics ; Volume 55, Issue 3 , 2011 ; 12860042 (ISSN) Arghavani Nia, B ; Ghaderi, A ; Solaymani, S ; Oskoie, M ; Sharif University of Technology
    Abstract
    Growth of thin layers of compound semiconductors such as GaAs and Al x Ga1-x As was obtained by Liquid Phase Epitaxy (LPE) at 838-828 ° C in thickness range of 0.1-4.3 μm which was estimated by Scanning Electron Microscopy (SEM). By Secondary Ion Mass Spectroscopy (SIMS) measurements, type of impurity atoms and their density and uniformity with respect to thickness were measured. In this way we are sure that variation of impurity atoms such as Si, Te, Sn and Ge indicates that epilayers were formed uniformly and it demonstrated that the LPE growth was a suitable way to obtain a good quality of epitaxy layers. Amount of composition parameter x in the compound semiconductor AlxGa1-xAs was... 

    Integrating evolutionary game theory into an agent-based model of ductal carcinoma in situ: Role of gap junctions in cancer progression

    , Article Computer Methods and Programs in Biomedicine ; Volume 136 , 2016 , Pages 107-117 ; 01692607 (ISSN) Malekian, N ; Habibi, J ; Zangooei, M. H ; Aghakhani, H ; Sharif University of Technology
    Elsevier Ireland Ltd 
    Abstract
    Background and objective There are many cells with various phenotypic behaviors in cancer interacting with each other. For example, an apoptotic cell may induce apoptosis in adjacent cells. A living cell can also protect cells from undergoing apoptosis and necrosis. These survival and death signals are propagated through interaction pathways between adjacent cells called gap junctions. The function of these signals depends on the cellular context of the cell receiving them. For instance, a receiver cell experiencing a low level of oxygen may interpret a received survival signal as an apoptosis signal. In this study, we examine the effect of these signals on tumor growth. Methods We make an... 

    Simulation the ultra-fine microstructure evolution during annealing of metal processed by ECAP

    , Article Computational Materials Science ; Volume 43, Issue 2 , August , 2008 , Pages 309-312 ; 09270256 (ISSN) Kazeminezhad, M ; Sharif University of Technology
    2008
    Abstract
    A Monte Carlo model is modified by using Turnbull-Fisher nucleation rate model to simulate the ultra-fine microstructure evolution during annealing of pure copper processed by equal channel angular pressing (ECAP). The simulation is utilized to predict the grain size of pure copper samples at different annealing temperatures and pass numbers of ECAP. Also, in the simulation the constant nucleation rate model is assumed and a good agreement is achieved between the simulation results and experimental data. Thus, it can be concluded that the constant nucleation rate is prevailed during the microstructure evolution. © 2007 Elsevier B.V. All rights reserved  

    Artificial neural network modeling for evaluating of epitaxial growth of Ti6Al4V weldment

    , Article Materials Science and Engineering A ; Volume 432, Issue 1-2 , 2006 , Pages 184-190 ; 09215093 (ISSN) Karimzadeh, F ; Ebnonnasir, A ; Foroughi, A ; Sharif University of Technology
    2006
    Abstract
    The effect of epitaxial growth on microstructure of Ti-6Al-4V alloy weldment was examined by artificial neural networks (ANNs). The microplasma arc welding (MPAW) procedure was performed at different currents, welding speeds and flow rates of shielding and plasma gas. Microstructural characterizations were studied by optical and scanning electron microscopy (SEM). Finally, an artificial neural network was developed to predict grain size of fusion zone (FZ) at different currents and welding speeds. The results showed that a coarse primary β phase develops in the fusion zone as a result of epitaxial nucleation on coarsened β grains near the heat affected zone (NHAZ) which grow competitively...