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    Work-in-progress: heterogeneous redundancy to address performance and cost in multi-core SIMT

    , Article 2017 International Conference on Hardware/Software Codesign and System Synthesis, CODES+ISSS 2017, 15 October 2017 through 20 October 2017 ; 2017 ; 9781450351850 (ISBN) Naghashi, M ; Mozafari, S. H ; Hessabi, S ; Sharif University of Technology
    Abstract
    As manufacturing processes scale to smaller feature sizes and processors become more complex, it is becoming challenging to have fabricated devices that operate according to their speciication in the irst place: yield losses are mounting [3]. © 2017 ACM  

    Fault tolerant and low energy write-back heterogeneous set associative cache for DSM technologies

    , Article International Conference on Availability, Reliability and Security, ARES 2009, Fukuoka, Fukuoka Prefecture, 16 March 2009 through 19 March 2009 ; 2009 , Pages 448-453 ; 9780769535647 (ISBN) Manoochehri, M ; Ejlali, A ; Miremadi, S. G ; Sharif University of Technology
    2009
    Abstract
    This paper presents a fault tolerant and energy efficient write-back set-associative cache, which has a heterogeneous structure. The cache architecture is based on partitioning the ways of each set into two different parts. In each set, one cache way uses SECDED code and maintains dirty blocks while the other ways employ parity bit and keep clean blocks. To evaluate the set-associative cache, SIMPLESCALAR tool and CACTI analytical model are used. The experimental results show that as the feature size decreases and the associativity increases, the energy saving of the proposed cache increases. The experimental results express that for an 8-way setassociative cache in 32nm, about 7% area and... 

    Joint write policy and fault-tolerance mechanism selection for caches in DSM technologies: energy-reliability trade-off

    , Article Proceedings of the 10th International Symposium on Quality Electronic Design, ISQED 2009, 16 March 2009 through 18 March 2009, San Jose, CA ; 2009 , Pages 839-844 ; 9781424429530 (ISBN) Manoochehri, M ; Ejlali, A ; Miremadi, G ; International Society for Quality Electronic Design, ISQED ; Sharif University of Technology
    2009
    Abstract
    Write-through caches potentially have higher reliability than write-back caches. However, write-back caches are more energy efficient. This paper provides a comparison between the write-back and write-through policies based on the combination of reliability and energy consumption criteria. In the experiments, SIMPLESCALAR tool and CACTI model are used to evaluate the characteristics of the caches. The results show that a write-through cache with one parity bit per word is as reliable as a write-back cache with SEC-DED code per word. Furthermore, the results show that the energy saving of the write-through cache over the write-back cache increases if any of the following changes happens: i) a... 

    An optimized phased-array antenna for intra-chip communications

    , Article LAPC 2011 - 2011 Loughborough Antennas and Propagation Conference, 14 November 2011 through 15 November 2011 ; November , 2011 , Page(s): 1 - 4 ; 9781457710155 (ISBN) Tavakoli, E ; Tabandeh, M ; Kaffash, S ; Sharif University of Technology
    2011
    Abstract
    The continued migration to smaller nanometer geometries brought fundamental limits to traditional on-chip hard wires performance. According to the International Technology Roadmap for Semiconductor (ITRS), feature size shrinking leads an increase in the operating frequency of RFCMOS devices. Thus, new interconnect methodologies such as radio frequency (RF) wireless can be employed on future chips projected for intra-chip wireless data communications. The size of Si integrated antenna in these frequencies will be several millimetres and the antenna length will be decrease by frequency increasing. In this paper, we have proposed an optimum radiation pattern achieved by a phased array (PA)... 

    Tolerance analysis of mechanical assemblies based on modal interval and small degrees of freedom (MI-SDOF) concepts

    , Article International Journal of Advanced Manufacturing Technology ; Volume 50, Issue 9-12 , 2010 , Pages 1041-1061 ; 02683768 (ISSN) Khodaygan, S ; Movahhedy, M. R ; Saadat Fomani, M ; Sharif University of Technology
    Abstract
    Tolerance analysis is a key analytical tool for estimation of accumulating effects of the individual part tolerances on the design specifications of a mechanical assembly. This paper presents a new feature-based approach to tolerance analysis for mechanical assemblies with geometrical and dimensional tolerances. In this approach, geometrical and dimensional tolerances are expressed by small degrees of freedom (SDOF) of geometric entities (faces, feature axes, edges, and features of size) that are described by tolerance zones. The uncertainty of dimensions and geometrical form of features due to tolerances is mathematically described using modal interval arithmetic. The two concepts of modal... 

    A morphable phase change memory architecture considering frequent zero values

    , Article Proceedings - IEEE International Conference on Computer Design: VLSI in Computers and Processors ; 2011 , Pages 373-380 ; 10636404 (ISSN) ; 9781457719523 (ISBN) Arjomand, M ; Jadidi, A ; Shafiee, A ; Sarbazi Azad, H ; Sharif University of Technology
    Abstract
    Phase Change Memory (PCM) is emerging as a high-dense and power-efficient choice for future main memory systems. While PCM cell size is marching towards minimum achievable feature size, recent prototypes effectively improve device scalability by storing multiple bits per each cell. Unfortunately, Multi-Level Cell (MLC) PCM devices offer higher access time and energy when compared to Single-Level Cell (SLC) counterparts making it difficult to incorporate MLC in main memory. To address this challenge, we proposes Zero-value-based Morphable PCM, ZM-PCM for short, a novel MLC-PCM main memory architecture which tries incorporating benefits of both MLC and SLC devices within the same structure.... 

    A novel SET/SEU hardened parallel I/O port

    , Article 2009 IEEE Circuits and Systems International Conference on Testing and Diagnosis, ICTD'09, Chengdu, 28 April 2009 through 29 April 2009 ; 2009 ; 9781424425877 (ISBN) Razmkhah, M. H ; Miremadi, S. G ; Ejlali, A ; Fazeli, M ; Sharif University of Technology
    2009
    Abstract
    The continuous decrease in CMOS technology feature size increases the susceptibility of such circuits to single event transient SET and single event upset SEU, caused by energetic particles striking system wires and flip flops. This paper presents a novel SET/SEU-detection technique for I/O ports where different sampling times used to detect the effects of SET/SEUs. The power dissipation, area, reliability, and propagation delay of the SET/SEU-detection I/O port are analyzed by HSPICE v.X-2005.v9 simulation. The results show that this I/O port can detect all SET/SEUs, by consumption of about 113% more power and occupation of 145% more area than simple I/O port. ©2009 IEEE  

    Low energy single event upset/single event transient-tolerant latch for deep subMicron technologies

    , Article IET Computers and Digital Techniques ; Volume 3, Issue 3 , 2009 , Pages 289-303 ; 17518601 (ISSN) Fazeli, M ; Miremadi, S. G ; Ejlali, A ; Patooghy, A ; Sharif University of Technology
    2009
    Abstract
    Single event upsets (SEUs) and single event transients (SETs) are major reliability concerns in deep submicron technologies. As technology feature size shrinks, digital circuits are becoming more susceptible to SEUs and SETs. A novel SEU/SET-tolerant latch called feedback redundant SEU/SET-tolerant latch (FERST) is presented, where redundant feedback lines are used to mask SEUs and delay elements are used to filter SETs. Detailed SPICE simulations have been done to evaluate the proposed design and compare it with previous latch designs. The results show that the SEU tolerance of the FERST latch is almost equal to that of a TMR latch (a widely used latch which is the most reliable among the...