Sharif Digital Repository

We are proposing a next-generation graphene nanoribbon field-effect transistor (GNRFET) with superlattice source, channel, and drain (SLSCD-GNRFET), with significantly improved switching performance. The presence of superlattice in each region is for energy filtering. The simulation results indicate that the addition of an appropriate superlattice in the channel region, it reduces the subthreshold swing. Also, using proper superlattice in the drain region leads to an increase of more than a decade in the ION/IOFF ratio by intensely reducing the OFF-current. These improvements make the proposed transistor potentially suitable for the next-generation logical digital applications. Comparison of... 

Field-effect transistors have been widely used to study electronic transport and doping in colloidal quantum dot solids to great effect. However, the full power of these devices to elucidate the electronic structure of materials has yet to be harnessed. Here, we deploy nanodielectric field-effect transistors to map the energy landscape within the band gap of a colloidal quantum dot solid. We exploit the self-limiting nature of the potentiostatic anodization growth mode to produce the thinnest usable gate dielectric, subject to our voltage breakdown requirements defined by the Fermi sweep range of interest. Lead sulfide colloidal quantum dots are applied as the active region and are treated... 

We report the results of our numerical investigation on the temperature dependence of the characteristics of the cylindrical gate-all-around Si nanowire field effect transistor (Si-NW-FET). Assuming the effect of temperature on the energy band structure of Si just like the effect of strain, we simulate the transistor characteristics at various temperatures (50 K ≤ T ≤ 300 K). In this investigation, we demonstrate the temperature dependence of the transistor sub-threshold swing and the threshold voltage are both linear functions of the temperature, represented by 61.5 × (T/300) + 63.4 (mV/decade) and 220140 × (T/300-1) (mV). By calculating the IDS - T characteristics for VDS = 0.4 V and... 

A novel recognition method for selective determination of the hyoscine N-Butyl bromide (HBB), an antispasmodic agent for smooth muscles, was devised using extended gate field-effect transistor (EG-FET) as transducing unit. For this purpose a PVC membrane, containing hyoscine n-butyl-tetraphenyl borate ion-pair as recognition component, was coated on Ag/AgCl wire, which was connected to the extended metal gate. In optimal conditions, the linear range for HBB was 10-8-10-5 molL−1 with limit of detection 1.7×10-9 molL-1. The proposed sensor was applied in real sample, it showed fast response with high accuracy, and therefore it could be used as HPLC detector in the pharmaceutical samples in... 

The promise of graphene for use as a vapor sensor motivated exploration of the vapor responses of graphene nanomesh (GNM) functionalized with single stranded DNA. Devices detected different vapor types, including carboxylic acids, aldehydes, organophosphates, and explosives. As-fabricated GNM field effect transistors (FETs) had larger vapor responses than standard graphene FETs due to the effect of oxidized edges and lattice defects. DNA-GNM devices discriminated between homologous species with detection limits of a few parts per million, with fast response and recovery. Responses varied significantly when the base sequence of the DNA was changed, making the sensor class an intriguing... 

This paper proposes a graphene nanoribbon field effect transistor (GNRFET) consisting of pitched semiconducting GNRs as the channels that are connected to the metallic graphene source/drain in a seamless fashion. We obtained the diagrams for frequency bandwidths, step time responses, and Nyquist stability for the seamless pitched GNRFET (SP-GNRFET) with a channel having 100 pitched GNRs at 10 nm pitch in the common source configuration with various dimensions of the GNRs. The aforementioned diagrams were also obtained for the pitched carbon nanotube field effect transistor (CNTFET) with a channel having 100 pitched CNTs at 10 nm pitch in the common source configuration with various... 

In this paper, a three-dimensional (3D) analytical solution of the electrostatic potential is derived for the tri-gate tunneling field-effect transistors (TG TFETs) based on the perimeter-weighted-sum approach. The model is derived by separating the device into a symmetric and an asymmetric double-gate (DG) TFETs and then solving the 2D Poisson’s equation for these structures. The subthreshold tunneling current expression is extracted by numerical integrating the band-to-band tunneling generation rate over the volume of the device. It is shown that the potential distributions, the electric field profile, and the tunneling current predicted by the analytical model are in close agreement with... 

Our aim is to improve the switching performance of the graphene nanoribbon field-effect transistors (GNRFETs), exploiting the concept of energy filtering. Within the proposed scheme, a superlattice (SL) structure is used in the source of the transistor for filtering high-energy electron tail by engineering the density of states (DOS). According to simulation results, this can significantly decrease the OFF-current and the subthreshold swing (SS). A comparison of the proposed device with a conventional GNRFET and a graphene nanoribbon (GNR) tunneling field-effect transistor (GNRTFET) demonstrates a significant improvement. Therefore, a typical SL-GNRFET can reduce the average and the minimum... 

The fabrication of ITO-capped WO3 nanowires associated with their bio-sensing properties in field-effect transistor diagnostics basis as a biosensor has been reported. The bio-sensing property for manipulated nanowires elucidated that the grown nanostructures were very sensitive to protein. The ITO-capped WO3 nanowires biosensor showed an intensive bio-sensing activity against reliable protein. Polylysine strongly charged bio-molecule was applied as model system to demonstrate the implementation of materialized biosensor. The employed sensing mechanism was ‘label-free’ and depended on bio-molecule’s intrinsic charge. For nanowires synthesis, the vapor–liquid–solid mechanism was used.... 

In this paper, a novel structure for MOSFET like CNTFETs (MOSCNTs) is proposed, combining the advantages of both high and low dielectrics to improve output characteristics. In this structure, the gate dielectric at the drain side is selected from a material with low dielectric constant to form smaller capacitances, while a material with high dielectric constant is selected at the source side to improve on current and reduce leakage current. The new structure is simulated based on the Schrödinger-Poisson formulation. Obtained results show that the proposed configuration has lower off and higher on current in comparison with low-k MOSCNTs. Also, using a two-dimensional model, a wide range of... 

Graphene nanoribbon field effect transistors are promising devices for beyond-CMOS nanoelectronics. Graphene is a semiconductor material with zero bandgap and its bandgap must be changed. One of the opening bandgap methods is using graphene nanoribbons. By applying a defect, there is more increase on band gap of monolayer armchair graphene nanoribbon field effect transistor. So, by applying more than one defect, we can reach to much more increase in bandgap of graphene nanoribbon field effect transistors (GNRFET). In this paper, double-gated monolayer armchair graphene nanoribbon field effect transistors (GNRFET) with one single vacancy (1SV) defect (so-called 1SVGNRFET)are simulated and... 

In this paper, a silicon-on-insulator (SOI) p-n-p-n tunneling field-effect transistor (TFET) with a silicon doped hafnium oxide (Si:HfO2) ferroelectric gate stack is proposed and investigated via 2D device simulation with a calibrated nonlocal band-to-band tunneling model. Utilization of Si:HfO2 instead of conventional perovskite ferroelectrics such as lead zirconium titanate (PbZrTiO3) and strontium bismuth tantalate (SrBi2Ta2O9) provides compatibility to the CMOS process as well as improved device scalability. By using Si:HfO2 ferroelectric gate stack, the applied gate voltage is effectively amplified that causes increased electric field at the tunneling junction and reduced tunneling...