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MOD growth of epitaxial cerium oxide buffer layer on LAO substrates for fabrication of c-axis oriented YBCO
, Article Micro and Nano Letters ; Volume 7, Issue 10 , 2012 , Pages 1008-1010 ; 17500443 (ISSN) ; Foroughi Abari, F ; Vesaghi, M. A ; Fardmanesh, M ; Sharif University of Technology
2012
Abstract
Epitaxial cerium oxide (CeO2) buffer layer has been grown on lanthanum aluminate (LAO) single crystal substrates for fabrication of c-axis oriented YBa2Cu3O7-x (YBCO). Precursor solution of cerium acetylacetonates with viscosity of 0.6 centipoises was spin coated on the 1×1 cm area LAO substrates. The calcination was carried out by very slow ramp (1°C per minute) until the final temperature of 500°C in oxygen flow to remove most of the organic compounds. The final heat treatment has been done at 780°C by a ramp of 20° per minute in gas flow of mixed argon-oxygen with 5 Pa partial pressure of oxygen. The thickness of the deposited CeO2 buffer layer was 20 nm. Then, 100 nm thick YBCO film was...