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A silicon doped hafnium oxide ferroelectric p-n-p-n SOI tunneling field-effect transistor with steep subthreshold slope and high switching state current ratio
, Article AIP Advances ; Volume 6, Issue 9 , 2016 ; 21583226 (ISSN) ; Hosseini, S. E ; Faez, R ; Sharif University of Technology
American Institute of Physics Inc
2016
Abstract
In this paper, a silicon-on-insulator (SOI) p-n-p-n tunneling field-effect transistor (TFET) with a silicon doped hafnium oxide (Si:HfO2) ferroelectric gate stack is proposed and investigated via 2D device simulation with a calibrated nonlocal band-to-band tunneling model. Utilization of Si:HfO2 instead of conventional perovskite ferroelectrics such as lead zirconium titanate (PbZrTiO3) and strontium bismuth tantalate (SrBi2Ta2O9) provides compatibility to the CMOS process as well as improved device scalability. By using Si:HfO2 ferroelectric gate stack, the applied gate voltage is effectively amplified that causes increased electric field at the tunneling junction and reduced tunneling...
Two-dimensional quantum simulation of scaling effects in ultrathin body MOSFET structure: NEGF approach
, Article 14th International Workshop on the Physics of Semiconductor Devices, IWPSD, Mumbai, 16 December 2007 through 20 December 2007 ; 2007 , Pages 240-242 ; 9781424417285 (ISBN) ; Dehdashti, N ; Faez, R ; Sharif University of Technology
2007
Abstract
For the first time, we present self-consistent solution of ultrathin body device structures to investigate the device parameters variation on the characteristics of nanoscale MOSFET. Our two dimensional (2-D) device simulator Is based on Nonequlibrium Green's Function (NEGF) forma lism. Starting from a basic structure (DG-MOSFET) with a gate length of 10 nm, variation of gate length, channel thickness, gate oxide parameters was carried out in connection with the numerical calculation of device characteristics. In this work Quantum transport equations are solved in 2-D by NEGF method in active area of the device to obtain the charge density and Poisson's equation is solved in entire domain of...