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    Magnetoelastic instability of a long graphene nano-ribbon carrying electric current

    , Article Advances in Applied Mathematics and Mechanics ; Vol. 6, issue. 3 , 2014 , pp. 299-306 ; ISSN: 20700733 Firouz-Abadi, R. D ; Mohammadkhani, H ; Sharif University of Technology
    Abstract
    This paper aims at investigating the resonance frequencies and stability of a long Graphene Nano-Ribbon (GNR) carrying electric current. The governing equation of motion is obtained based on the Euler-Bernoulli beam model along with Hamilton's principle. The transverse force distribution on the GNR due to the interaction of the electric current with its own magnetic field is determined by the Biot-Savart and Lorentz force laws. Using Galerkin's method, the governing equation is solved and the effect of current strength and dimensions of the GNR on the stability and resonance frequencies are investigated  

    Mechanical properties of graphene cantilever from atomic force microscopy and density functional theory

    , Article Nanotechnology ; Volume 21, Issue 18, Article number 185503 , 2010 ; 09574484 Rasuli, R. (Reza) ; Iraji Zad, A. (Azam) ; Ahadian, M. M ; Sharif University of Technology
    Abstract
    We have studied the mechanical properties of a few-layer graphene cantilever (FLGC) using atomic force microscopy (AFM). The mechanical properties of the suspended FLGC over an open hole have been derived from the AFM data. Force displacement curves using the Derjaguin–Müller–Toporov (DMT) and the massless cantilever beam models yield a Young modulus of Ec ~ 37, Ea ~ 0.7 TPa and a Hamakar constant of ~ 3 × 10 − 18 J. The threshold force to shear the FLGC was determined from a breaking force and modeling. In addition, we studied a graphene nanoribbon (GNR), which is a system similar to the FLGC; using density functional theory (DFT). The in-plane Young's modulus for the GNRs were calculated... 

    Stability analysis in graphene nanoribbon interconnects

    , Article IEEE Electron Device Letters ; Volume 31, Issue 12 , 2010 , Pages 1458-1460 ; 07413106 (ISSN) Haji Nasiri, S ; Moravvej Farshi, M. K ; Faez, R ; Sharif University of Technology
    Abstract
    We present a Nyquist stability criterion based on transmission line modeling for graphene nanoribbon (GNR) interconnects. This is the first instance that such an analysis has been presented for GNR, so far. In this analysis, the dependence of the degree of relative stability for multilayer GNR (MLGNR) interconnects on the geometry of each ribbon has been acquired. It is shown that, increasing the length and width, MLGNR interconnects become more stable  

    Vibration analysis of a graphene nanoribbon under harmonic lorentz force using a hybrid modal-molecular dynamics method

    , Article International Journal of Structural Stability and Dynamics ; Vol. 14, issue. 2 , 2014 ; ISSN: 02194554 Firouz-Abadi, R. D ; Mohammadkhani, H ; Amini, H ; Sharif University of Technology
    Abstract
    An efficient hybrid modal-molecular dynamics method is developed for the vibration analysis of large scale nanostructures. Using the reduced order method, presented in this paper, linear and nonlinear vibrations of a suspended graphene nanoribbon (GNR) carrying an electric current in a harmonic magnetic field are investigated. The resonance frequencies as well as the nonlinear vibration response obtained by the present technique and direct molecular dynamic simulations are in very good agreement. Also, the obtained results illustrate the hardening behavior of nonlinear vibrations which is diminished by stretching the GNR  

    Peculiar transport properties in Z-shaped graphene nanoribbons: A nanoscale NOR gate

    , Article Thin Solid Films ; Volume 548 , 2013 , Pages 443-448 ; 00406090 (ISSN) Khoeini, F ; Khoeini, F ; Shokri, A ; Sharif University of Technology
    2013
    Abstract
    A nanoscale logic NOR gate has been theoretically designed by magnetic flux inputs in a Z-shaped graphene nanoribbon composed of an armchair ribbon device sandwiched between two semi-infinite metallic zigzag ribbon leads. The calculations are based on the tight-binding model and iterative Green's function method, in which the conductance as well as current-voltage characteristics of the nanosystem are calculated, numerically. We show that the current and conductance are highly sensitive to both the magnetic fluxes subject to the device and the size of the system. Our results may have important applications for building blocks in the nanoelectronic devices based on graphene nanoribbons  

    A novel graphene nanoribbon field effect transistor with two different gate insulators

    , Article Physica E: Low-Dimensional Systems and Nanostructures ; Volume 66 , 2015 , Pages 133-139 ; 13869477 (ISSN) Akbari Eshkalak, M ; Faez, R ; Haji Nasiri, S ; Sharif University of Technology
    Elsevier  2015
    Abstract
    In this paper, a novel structure for a dual-gated graphene nanoribbon field-effect transistor (GNRFET) is offered, which combines the advantages of high and low dielectric constants. In the proposed Two Different Insulators GNRFET (TDI-GNRFET), the gate dielectric at the drain side is a material with low dielectric constant to form smaller capacitances, while in the source side, there is a material with high dielectric constant to improve On-current and reduce the leakage current. Simulations are performed based on self-consistent solutions of the Poisson equation coupled with Non-Equilibrium Green's Function (NEGF) formalism in the ballistic regime. We assume a tight-binding Hamiltonian in... 

    GNRFET with superlattice source, channel, and drain: SLSCD-GNRFET

    , Article Physica E: Low-Dimensional Systems and Nanostructures ; Volume 131 , 2021 ; 13869477 (ISSN) Behtoee, B ; Faez, R ; Shahhoseini, A ; Moravvej Farshi, M. K ; Sharif University of Technology
    Elsevier B.V  2021
    Abstract
    We are proposing a next-generation graphene nanoribbon field-effect transistor (GNRFET) with superlattice source, channel, and drain (SLSCD-GNRFET), with significantly improved switching performance. The presence of superlattice in each region is for energy filtering. The simulation results indicate that the addition of an appropriate superlattice in the channel region, it reduces the subthreshold swing. Also, using proper superlattice in the drain region leads to an increase of more than a decade in the ION/IOFF ratio by intensely reducing the OFF-current. These improvements make the proposed transistor potentially suitable for the next-generation logical digital applications. Comparison of... 

    Effect of varying dielectric constant on relative stability for graphene nanoribbon interconnects

    , Article Applied Mechanics and Materials, 24 July 2012 through 26 July 2012, Kuala Lumpur ; Volume 229-231 , July , 2012 , Pages 201-204 ; 16609336 (ISSN) ; 9783037855102 (ISBN) Farrokhi, M ; Faez, R ; Nasiri, S. H ; Davoodi, B ; Sharif University of Technology
    2012
    Abstract
    The remarkable properties of graphene nanoribbons (GNRs) make them attractive for nano-scale devices applications, especially for transistor and interconnect. Furthermore, for reduction interconnects signal delay, low dielectric constant materials are being introduced to replace conventional dielectrics in next generation IC technologies. With these regards, studding the effect of varying dielectric constant (e{open}r) on relative stability of graphene nanoribbons interconnect is an important viewpoint in performance evaluation of system. In this paper, Nyquist stability analysis based on transmission line modeling (TLM) for graphene nanoribbon interconnects is investigated. In this... 

    Effect of varying aspect ratio on relative stability for graphene nanoribbon interconnects

    , Article Applied Mechanics and Materials, 24 July 2012 through 26 July 2012 ; Volume 229-231 , November , 2012 , Pages 205-209 ; 16609336 (ISSN) ; 9783037855102 (ISBN) Farrokhi, M ; Faez, R ; Nasiri, S. H ; Davoodi, B ; Sharif University of Technology
    2012
    Abstract
    Achieving dense off-chip interconnection with satisfactory electrical performance is emerging as a major challenge in advanced system engineering. Graphene nanoribbons (GNRs) have been recently proposed as one of the potential candidate materials for both transistors and interconnect. In addition, development is still underway for alternative materials and processes for high aspect ratio (AR) contacts. Studding the effect of varying aspect ratio on relative stability of graphene nanoribbon interconnects is an important viewpoint in performance evaluation of system. In this paper, Nyquist stability analysis based on transmission line modeling (TLM) for GNR interconnects is investigated. In... 

    Improving ION / IOFF and sub-threshold swing in graphene nanoribbon field-effect transistors using single vacancy defects

    , Article Superlattices and Microstructures ; Volume 86 , October , 2015 , Pages 483-492 ; 07496036 (ISSN) Nazari, A ; Faez, R ; Shamloo, H ; Sharif University of Technology
    Academic Press  2015
    Abstract
    Graphene nanoribbon field effect transistors are promising devices for beyond-CMOS nanoelectronics. Graphene is a semiconductor material with zero bandgap and its bandgap must be changed. One of the opening bandgap methods is using graphene nanoribbons. By applying a defect, there is more increase on band gap of monolayer armchair graphene nanoribbon field effect transistor. So, by applying more than one defect, we can reach to much more increase in bandgap of graphene nanoribbon field effect transistors (GNRFET). In this paper, double-gated monolayer armchair graphene nanoribbon field effect transistors (GNRFET) with one single vacancy (1SV) defect (so-called 1SVGNRFET)are simulated and... 

    Mechanical properties of graphene cantilever from atomic force microscopy and density functional theory

    , Article Nanotechnology ; Volume 21, Issue 18 , 2010 ; 09574484 (ISSN) Rasuli, R ; Iraji Zad, A ; Ahadian, M. M ; Sharif University of Technology
    2010
    Abstract
    We have studied the mechanical properties of a few-layer graphene cantilever (FLGC) using atomic force microscopy (AFM). The mechanical properties of the suspended FLGC over an open hole have been derived from the AFM data. Force displacement curves using the Derjaguin-Müller-Toporov (DMT) and the massless cantilever beam models yield a Young modulus of Ec ∼ 37, Ea ∼ 0.7TPa and a Hamakar constant of ∼ 3 × 10 -18J. The threshold force to shear the FLGC was determined from a breaking force and modeling. In addition, we studied a graphene nanoribbon (GNR), which is a system similar to the FLGC; using density functional theory (DFT). The in-plane Young's modulus for the GNRs were calculated from... 

    Molecular dynamics simulation for interlayer interactions of graphene nanoribbons with multiple layers

    , Article Superlattices and Microstructures ; Volume 98 , 2016 , Pages 228-234 ; 07496036 (ISSN) Nazemnezhad, R ; Zare, M ; Hosseini Hashemi, Sh ; Shokrollahi, H ; Sharif University of Technology
    Academic Press 
    Abstract
    A new study is conducted with the aid of molecular dynamics (MD) simulation to investigate the effect of shear modulus value of the interlayer van der Waals (vdWs) interactions on free vibration of cantilever multi-layer graphene nanoribbons (MLGNRs). The corresponding calibrated nonlocal parameters of the nonlocal model are obtained accordingly. The vdWs interactions are treated as the cores between every two adjacent graphene layers and their equivalent shear modulus is calculated using MD simulation. The obtained resonant frequencies via the nonlocal sandwich model are compared to the MD simulation results to calibrate the nonlocal parameter. Results reveal a strong conclusion that the... 

    Spin FET based on graphene nanoribbon in the presence of surface roughness

    , Article IEEE Transactions on Electron Devices ; Volume 64, Issue 8 , 2017 , Pages 3437-3442 ; 00189383 (ISSN) Chaghazardi, Z ; Faez, R ; Babaee Touski, S ; Pourfath, M ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2017
    Abstract
    In this paper, the characteristics of an armchair graphene nanoribbon spin FET (SFET) are investigated in the presence and absence of surface roughness, by employing a multiorbital tight-binding method along with the nonequilibrium Green's function approach. It is found that the bandgap monotonically decreases with increasing the vertical electric field, since Stark effect enhances spin-flip rate under a high vertical electric field. Furthermore, spin transport in the presence of a random potential, which is induced by the concurrent effect of the applied vertical electric field and surface roughness, is carefully analyzed. This random potential strongly scatters carriers and reduces spin... 

    Modeling of a vertical tunneling transistor based on graphene-mos2 heterostructure

    , Article IEEE Transactions on Electron Devices ; Volume 64, Issue 8 , 2017 , Pages 3459-3465 ; 00189383 (ISSN) Horri, A ; Faez, R ; Pourfath, M ; Darvish, G ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2017
    Abstract
    In this paper, for the first time, we present a computational study on the electrical behavior of the field-effect tunneling transistor based on vertical graphene-MoS2 heterostructure and vertical graphene nanoribbon-MoS2 heterostructure. Our simulation is based on nonequilibrium Green's function formalism along with an atomistic tight-binding (TB) model. The TB parameters are obtained by fitting the bandstructure to first-principle results. By using this model, electrical characteristics of device, such as I ON/I OFF ratio, subthreshold swing, and intrinsic gate-delay time, are investigated. We show that the combination of tunneling and thermionic transport allows modulation of current by... 

    Modeling comparison of graphene nanoribbon field effect transistors with single vacancy defect

    , Article Superlattices and Microstructures ; Volume 97 , 2016 , Pages 28-45 ; 07496036 (ISSN) Nazari, A ; Faez, R ; Shamloo, H ; Sharif University of Technology
    Academic Press  2016
    Abstract
    In this paper, some important circuit parameters of a monolayer armchair graphene nanoribbon (GNR) field effect transistor (GNRFET) in different structures are studied. Also, these structures are Ideal with no defect, 1SVGNRFET with one single vacancy defect, and 3SVsGNRFET with three SV defects. Moreover, the circuit parameters are extracted based on Semi Classical Top of Barrier Modeling (SCTOBM) method. The I-V characteristics simulations of Ideal GNRFET, 1SVGNRFET and 3SVsGNRFET are used for comparing with SCTOBM method. These simulations are solved with Poisson-Schrodinger equation self-consistently by using Non- Equilibrium Green Function (NEGF) and in the real space approach. The... 

    Highly sensitive nonenzymetic glucose sensing platform based on MOF-derived NiCo LDH nanosheets/graphene nanoribbons composite

    , Article Journal of Electroanalytical Chemistry ; Volume 808 , 2018 , Pages 114-123 ; 15726657 (ISSN) Asadian, E ; Shahrokhian, S ; Iraji Zad, A ; Sharif University of Technology
    Elsevier B.V  2018
    Abstract
    Herein, a novel sensing platform based on NiCo layered double hydroxide (LDH) nanosheets/graphene nanoribbons (GNRs) modified glassy carbon electrode is presented for sensitive non-enzymetic determination of glucose. In the first step, nanoflower-like NiCo LDH nanosheets were grown on the surface of ZIF-67 dodecahedron nanocrystals which used as sacrificial template and were further characterized by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), X-ray powder diffraction (XRD) and FTIR. In the next step, in order to fabricate a mechanically stable modified electrode, the as-prepared nanosheets were mixed with...