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Simulation of a carbon nanotube field effect transistor with two different gate insulators
, Article Scientia Iranica ; Volume 20, Issue 6 , 2013 , Pages 2332-2340 ; 10263098 (ISSN) ; Faez, R ; Jafari, A. H ; Sharif University of Technology
Sharif University of Technology
2013
Abstract
In this paper, a novel structure for MOSFET like CNTFETs (MOSCNTs) is proposed, combining the advantages of both high and low dielectrics to improve output characteristics. In this structure, the gate dielectric at the drain side is selected from a material with low dielectric constant to form smaller capacitances, while a material with high dielectric constant is selected at the source side to improve on current and reduce leakage current. The new structure is simulated based on the Schrödinger-Poisson formulation. Obtained results show that the proposed configuration has lower off and higher on current in comparison with low-k MOSCNTs. Also, using a two-dimensional model, a wide range of...