Sharif Digital Repository

This paper presents the design procedure of monolithic microwave integrated circuit (MMIC) high-power amplifiers (HPAs) as well as implementation of high-efficiency and compact-size HPAs in a 0.25-μm AlGaAs-InGaAs pHEMT technology. Presented design techniques used to extend bandwidth, improve efficiency, and reduce chip area of the HPAs are described in detail. The first HPA delivers 5 W of output power with 40% power-added efficiency (PAE) in the frequency band of 8.5-12.5 GHz, while providing 20 dB of small-signal gain. The second HPA delivers 8 W of output power with 35% PAE in the frequency band of 7.5-12 GHz, while maintaining a small-signal gain of 17.5 dB. The 8-W HPA chip area is 8.8... 

In this article, a design methodology is presented to realize integrated class-F high-power amplifiers (HPAs). A harmonic-control network (HCN) is proposed to present short- and open-circuit impedances to each transistor employed in the output stage of the HPA at 2f_0 and 3f_0 frequencies. The HCN absorbs the parasitic capacitance of the transistor and lends itself to be absorbed in the matching and power combiner networks, reducing the die area of the HPA. A proof-of-concept 9.7-10.3-GHz class-F HPA was designed and implemented in a 0.25-μm GaAs pHEMT technology with VDD of 6 V. The designed HPA consists of two amplifying stages, and its output stage includes 16 transistors in parallel to...