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hot-carrier-effect
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Modeling of dynamic trap density increase for aging simulation of any MOSFET circuits
, Article European Solid-State Device Research Conference, 11 September 2017 through 14 September 2017 ; 2017 , Pages 192-195 ; 19308876 (ISSN) ; 9781509059782 (ISBN) ; Miyamoto, H ; Kikuchihara, H ; Navarro, D ; Maiti, T. K ; Rohbani, N ; Ma, C ; Mattausch, H. J ; Schiffmann, A ; Steinmair, A ; Seebacher, E ; Sharif University of Technology
Abstract
A compact aging model for circuit simulation has been developed by considering all possible trapped carriers within MOSFETs. The hot carrier effect and the N(P)BTI effect are modeled by integrating the substrate current as well as the oxide field change due to the trapped carriers. Additionally, the carriers trapped within the highly resistive drift region are included for high-voltage (HV)-MOSFET modeling. The aging model considers the dynamic trap-density increase as a function of circuit-operation time with dynamically varying stress conditions for each individual MOSFET. A self-consistent solution is obtained by iteratively solving the Poisson equation including the trap density. The...
Circuit-aging modeling based on dynamic MOSFET degradation and its verification
, Article International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 7 September 2017 through 9 September 2017 ; Volume 2017-September , 2017 , Pages 97-100 ; 9784863486102 (ISBN) ; Miyamoto, H ; Kikuchihara, H ; Navarro, D ; Maiti, T. K ; Ma, C ; Miura Mattausch, M ; Miremadi, S. G ; Mattausch, H. J ; Sharif University of Technology
Abstract
The reported investigation aims at developing a compact model for circuit-aging simulation. The model considers dynamic trap-density increase during circuit operation in a consistent way. The model has been applied to an SRAM cell, where it is believed that the NBTI effect dominates. Our simulation verifies that the hot-carrier effect has a compensating influence on the NBTI aging of SRAM cells. © 2017 The Japan Society of Applied Physics
Compact modeling of dynamic trap density evolution for predicting circuit-performance aging
, Article Microelectronics Reliability ; Volume 80 , 2018 , Pages 164-175 ; 00262714 (ISSN) ; Miyamoto, H ; Kikuchihara, H ; Maiti, T. K ; Rohbani, N ; Navarro, D ; Mattausch, H. J ; Sharif University of Technology
Abstract
It is shown that a compact MOSFET-aging model for circuit simulation is possible by considering the dynamic trap-density increase, which is induced during circuit operation. The dynamic trap/detrap phenomenon, which influences the switching performance, is also considered on the basis of well-known previous results. Stress-dependent hot-carrier effect and NBTI effect, origins of the device aging, are modeled during the circuit simulation for each device by integrating the substrate current as well as by determining the oxide-field change due to the trapped carriers over the individual stress-duration periods. A self-consistent solution can be obtained only by iteratively solving the Poisson...