Sharif Digital Repository

In this paper, we argue that communication at the speed of light (CaSoL) through on-chip copper interconnects is possible in the near future based on giga-scale integration (GSI) technologies. A three-step algorithm is introduced to design the optimum buffers in such systems. HSPICE simulations show that a 1.3× time of flight (TF) is reachable in 7-nm FinFET technology. It is also shown that such a design is by nature, robust, and immune to process variations and crosstalk noise. © 1963-2012 IEEE  

Thermal noise is one of the most important limiting factors on the performance of switched-capacitor (SC) circuit due to the aliasing effect of wide-band thermal noise. In this paper a new simple method for estimating the effect of thermal noise is presented. In the proposed technique only the discrete sampled noise is considered. HSPICE simulator and analytical analysis are used to estimate the sampled noise specification on each clock state. Next, using difference equations of the circuit, time domain simulation is done by MATLAB. Based on this method, a SC integrator is analyzed and results compared to the measured noise response  

Thermal noise is one of the most important challenges in analogue integrated circuits design. This problem is more crucial in switched-capacitor (SC) filters due to the aliasing effect of wide-band thermal noise. In this article, a new simple method is proposed for estimating the power spectrum density of output thermal noise in SC filters, which have acceptable accuracy and short running time. In the proposed method, first using HSPICE simulator, accurate value of accumulated sampled noise on sampler capacitors in each clock state is achieved. Next, using difference equations of the SC filter, frequency response of the SC filter is shaped by time domain analysis. Based on the proposed... 

In this article, two soft error tolerant SRAM cells, the so-called RATF1 and RATF2, are proposed and evaluated. The proposed radiation hardened SRAM cells are capable of fully tolerating single event upsets (SEUs). Moreover, they show a high degree of robustness against single event multiple upsets (SEMUs). Over the previous SRAM cells, RATF1 and RATF2 offer lower area and power overhead. The Hspice simulation results through comparison with some prominent and state-of-the-art soft error tolerant SRAM cells show that our proposed robust SRAM cells have smaller area overhead (RAFT1 offers 58% smaller area than DICE), lower power delay product (RATF1 offers 231.33% and RATF2 offers 74.75%...