Sharif Digital Repository

In this paper, a route to ultra-broadband absorption is suggested and demonstrated by a feasible design. The high absorption regime (absorption above 90%) for the suggested structure ranges from visible to mid-infrared (MIR), i.e., for the wavelength varying from 478 to 3278 nm that yields an ultra-wide band with the width of 2800 nm. The structure consists of a top-layer-patterned metal-insulator-metal (MIM) configuration, into the insulator layer of which, an ultra-thin 5 nm layer of manganese (Mn) is embedded. The MIM configuration represents a Ti-Al2O3-Ti tri-layer. It is shown that, without the ultra-thin layer of Mn, the absorption bandwidth is reduced to 274 nm. Therefore, adding only... 

In this paper, an area-efficient LNA with on-chip input matching circuit utilizing an active inductor is presented. The active inductor is implemented based on the gyrator structure and its noise is improved by employing a feed-forward path (FFP). The overall low-noise performance of the LNA is achieved by cancelling the inductor noise through an additional FFP. It is shown that the proposed LNA circuit is capable of achieving low-noise performance with wideband tuning at the input in a small die area. A 0.32- to 1-GHz LNA has been designed and fabricated in a standard 0.18-μm CMOS technology. The LNA occupies a die area of less than 0.1 mm 2. The measured results show noise figure of... 

A 6-bit passive phase shifter for 2.5- to 3.2-GHz frequency band has been designed and implemented in a standard 0.18- μm CMOS technology. A new switched-network topology has been proposed for implementing the 5.625 ° phase shift step. The insertion loss of the circuit is compensated with an on-chip bidirectional amplifier. The measured return losses of the circuit are better than 8 dB with output 1-dB compression point of +9.5 dBm in the transmit mode and noise figure of 7.1 dB in the receive mode. The fabricated phase shifter demonstrates an average rms phase error of less than 2° over the entire operation bandwidth, which makes it suitable for high-precision applications  

An analytical approach for design optimization of multi-stage LNAs with common source topology is developed. This paper reviews and analyses simultaneous noise and input impedance matching in three different topologies including common source amplifier with inductive degeneration, resistive feedback and dual feedback in order to achieve maximum available gain and minimum possible noise figure (NF). A study on multi-stage LNAs is performed to calculate optimum input impedance of each stage for minimum overall NF while considering the gain and NF of that stage in addition to the effect of noise of the following stages. MATLAB was used to calculate the starting point of design optimization in a... 

The equivalent circuit approach (ECA) is used in this work to analyze and design a previously proposed one-dimensional planar blazed grating of the resonant type. The analysis covers both the classical Littrow configuration, when the direction of the relevant diffracted order coincides with that of the incident wave (Bragg blazing), and when these directions are different (off-Bragg blazing). Once the scattering problem of the grating structure is posed as a discontinuity problem inside an equivalent generalized waveguide (corresponding to the unit cell of the original structure) and studied in terms of its equivalent circuit network, the possibility of transferring all the power of the... 

An inductorless low noise amplifier (LNA) with active balun for digital TV (DTV) applications is presented. The LNA exploits a noise cancellation technique which allows for simultaneous wide-band impedance matching and low noise design. The matching and amplifier stages in the LNA topology perform single-ended to differential signal conversion with balanced output. The second and third-order nonlinearity of the individual amplifiers as well as the distortion caused by the interaction between the stages are suppressed to achieve high IIP2 and IIP3. A method for intrinsic cancellation of the second-order interaction is employed to reduce the dependence of the IIP3 on the frequency spacing... 

A highly linear X-band low-noise amplifier (LNA) is proposed and implemented in a standard 0.18-μm CMOS technology. The LNA features both high and low-gain operation modes. In its normal high-gain mode, the LNA shows a small-signal gain of 13.6 dB with an IIP3 of +9.5 dBm and a noise figure of 4.7 dB. The two-stage amplifier draws 90 mA from the 3.3V power supply to achieve +14.8 dBm output P1dB (+2.2 dBm input P1dB). In the low-gain mode, the gain is reduced by about 10 dB to further enhance the linearity and to accommodate very large blockers. Accordingly, the input P1dB is enhanced to +13.7 dBm while the noise figure is increased by 8.1 dB. A technique is also introduced to maintain the... 

In this study, ternary MWCNTs/CoFe2O4/FeCo nanocomposite coated with conductive PEDOT-polyaniline (PA@MW/F/C) co-polymers were synthesized by microwave-assisted sol-gel followed in-situ polymerization methods. The phases, crystal structures, morphologies, magnetic and electromagnetic features of the as-prepared samples were identified via XRD, SEM, XPS, VSM, and VNA respectively. Absorption characteristics were investigated in the frequency (12–18 GHz) Ku band. XRD, VSM and SEM analysis confirmed the partial reduction process of CoFe2O4 and successfully decorated magneto-dielectric particles with co-polymers. By measuring electromagnetic features of the samples, it was found that coating... 

The transformer-feedback (TRFB) interstage bandwidth enhancement technique for broadband multistage amplifiers is presented. Theory of the TRFB bandwidth enhancement and the design conditions for maximum bandwidth, maximally flat gain, and maximally flat group delay are provided. It is shown that the TRFB bandwidth enhancement can provide higher bandwidth compared to the conventional techniques based on reactive impedance matching networks. A three-stage low-noise amplifier (LNA) monolithic microwave integrated circuit with the TRFB between its consecutive stages is designed and implemented in a 0.1-μ m GaAs pHEMT process. The TRFB is realized by coupling between the drain bias lines of... 

This paper presents a design procedure for a wideband 6-18-GHz monolithic microwave integrated circuit highpower amplifier (HPA) in 0.25-μm AlGaAs-InGaAs pHEMT technology. The design is mainly focused on the realization of the passive circuits to provide the required low-loss and wideband impedance transformation networks. The two-stage GaAs HPA achieves an average output power of 39.6 dBm and a peak output power of 40.5 dBm at 11 GHz, in pulsed mode operation, with a small-signal gain of S21 > 10 dB over the entire bandwidth. The average power added efficiency (PAE) is 22%, with a peak PAE of 29% at 11 GHz. The HPA chip occupies an area of 5×3.6 mm2. The achieved output power and the... 

An efficient and low cost approach to realise a non-planar dual-polarised log-periodic dipole array antenna (LPDA) using printed circuit board technology is proposed which achieves a high bandwidth and operational frequency. The proposed antenna utilises a very short transition from a coaxial cable to a balanced four-conductor transmission line to realise an ultra-wide bandwidth balun and input impedance matching. An analysis of the utilised four-conductor transmission line alongside its comparison to two-conductor transmission line of a planar LPDA is also presented. Two prototypes of the antenna operating over the frequency ranges of 1-13 GHz and 1-18 GHz were designed, fabricated, and...