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ion-implantation
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Electrical properties of nanocontacts on silicon nanoparticles embedded in thin SiO2 synthesized by ultralow energy ion implantation
, Article Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures ; Volume 23, Issue 6 , 2005 , Pages 2821-2824 ; 10711023 (ISSN) ; Shalchian, M ; Coffin, H ; Claverie, A ; Grisolia, J ; Dumas, C ; Atarodi, S. M ; Sharif University of Technology
2005
Abstract
In this paper, we present the room temperature current-voltage characteristics of large (100×100 μ m2) and a nanoscale (100×100 nm2) metal-oxide-semiconductor (MOS) capacitor containing few silicon nanocrystals. The layer of silicon crystals is synthesized within the oxide of this capacitor by ultralow energy ion implantation and annealing. Current fluctuations in the form of discrete current steps and sharp peaks are apparent in the static and dynamic I (V) characteristics of the capacitor. These features have been associated to quantized charging and discharging of the nanoparticles and the resulting Coulomb interaction to the tunneling current. © 2005 American Vacuum Society
Design and Implement of the Ion Implanter’s Ion Gun Power Supplies by Using the Resonant Converters
, Ph.D. Dissertation Sharif University of Technology ; Rashidian, Bizhan (Supervisor) ; Zolghadri, Mohammad Reza (Supervisor) ; Alavi, Mohammad Hossein (Co-Advisor)
Abstract
In the Ion Implanter system a controled current through a tungesten filament, supplies the heat which causes the thermoionic emmition to ionize the gas molecules. Then the negativly charged electrones that are boiled off the filament, and also the ones that are removed from the outer ring of the gas molecules during the ionization process, are attracted by an adjustable voltage source. In this thesis, two resonant converter topologies are proposed to designe and to implement the adjustable current and voltage sources for ion implantation system. Unlike the PWM converters soft switching techniques, used auxiliary circuits to reduce the switching losses and EMI noises, in the proposed resonant...
Nitinol spinal vertebrae: A favorable new substitute
, Article International Journal of Engineering, Transactions B: Applications ; Volume 32, Issue 6 , 2019 , Pages 842-851 ; 1728144X (ISSN) ; Parsafar, M ; Rashtiani, Y ; Jadidi, M ; Sharif University of Technology
Materials and Energy Research Center
2019
Abstract
Scoliosis, kyphosis, and bone fracture are health problems, especially of the elderly throughout the world. The vertebra protects the spinal cord. Any impairment to the vertebra can lead to pain and nervousness. NiTi alloy (Nitinol) helps to resolve the problem by fulfilling such requirements as for strength, durability, resistance to wear, and shockwave damping which is due to the shape memory effect. Nitinol medical applications have so far been restricted to surgical devices and orthopaedics. Little has been said about Nitinol use for medication of the spinal vertebra disorder. This article appraises the potential features of Nitinol for vertebral implantation and therapeutic prescription...
Evolution of quantum electronic features with the size of silicon nanoparticles embedded in a SiO2 layer obtained by low energy ion implantation
, Article 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005, Giens, 25 September 2005 through 30 September 2005 ; Volume 108-109 , 2005 , Pages 71-76 ; 10120394 (ISSN); 3908451132 (ISBN); 9783908451136 (ISBN) ; Shalchian, M ; BenAssayag, G ; Coffin, H ; Bonafos, C ; Dumas, C ; Atarodi, S. M ; Claverie, A ; Sharif University of Technology
Trans Tech Publications Ltd
2005
Abstract
In this paper, we have studied the evolution of quantum electronic features with the size of silicon nanoparticles embedded in an ultra-thin SiO 2 layer. These nanoparticles were synthesized by ultralow energy (1 KeV) ion implantation and annealing. Their size was modified using the effect of annealing under slightly oxidizing ambient (N2+O2). Material characterization techniques including transmission electron microscopy (TEM) Fresnel imaging and spatially resolved electron energy loss spectroscopy (EELS) have been used to evaluate the effects of oxidation on structural characteristics of nanocrystal layer. Electrical transport characteristics have been measured on few (less than two...
The effects of oxidation conditions on structural and electrical properties of silicon nanoparticles obtained by ultra-low-energy ion implantation
, Article Nanotechnology ; Volume 16, Issue 12 , 2005 , Pages 2987-2992 ; 09574484 (ISSN) ; Shalchian, M ; Ben Assayag, G ; Coffin, H ; Bonafos, C ; Schamm, S ; Atarodi, S. M ; Claverie, A ; Sharif University of Technology
2005
Abstract
In this paper, we have studied the effect of annealing under slightly oxidizing ambient (N2+O2) on the structural and electrical characteristics of a limited number of silicon nanoparticles embedded in an ultra-thin SiO2 layer. These nanoparticles were synthesized by ultra-low-energy (1 keV) ion implantation and annealing. Specific experimental methods have been used to characterize the ncs populations. They include transmission electron microscopy (TEM) Fresnel imaging for evaluating the distances and widths of interest and spatially resolved electron energy loss spectroscopy (EELS) using the spectrum-imaging mode of a scanning transmission electron microscope (STEM) to measure the size...
Evolution of quantum electronic features with the size of silicon nanoparticles embedded in a sio2 layer obtained by low energy ion implantation
, Article 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2005, 25 September 2005 through 30 September 2005 ; Volume 108-109 , 2005 , Pages 71-76 ; 10120394 (ISSN); 9783908451136 (ISBN) ; Shalchian, M ; Benassayag, G ; Coffin, H ; Bonafos, C ; Dumas, C ; Atarodi, S. M ; Claverie, A ; Pichaud B ; Claverie A ; Alquier D ; Richter H ; Kittler M ; Richter H ; Kittler M ; Sharif University of Technology
Trans Tech Publications Ltd
2005
Abstract
In this paper, we have studied the evolution of quantum electronic features with the size of silicon nanoparticles embedded in an ultra-thin SiO2 layer. These nanoparticles were synthesized by ultralow energy (1 KeV) ion implantation and annealing. Their size was modified using the effect of annealing under slightly oxidizing ambient (N2+O2). Material characterization techniques including transmission electron microscopy (TEM) Fresnel imaging and spatially resolved electron energy loss spectroscopy (EELS) have been used to evaluate the effects of oxidation on structural characteristics of nanocrystal layer. Electrical transport characteristics have been measured on few (less than two...
Design of Monitoring and Control System for Ion Implanter Gases
, M.Sc. Thesis Sharif University of Technology ; Rashidian, Bijan (Supervisor)
Abstract
Very dangerous gases are used in ion implanter machines. Opening and closing the valves of these gases can be very dangerous. In this project, these valves are inspected, monitored and opened and closed from a safe distance. To do this, we must monitor and control the above system by using the latest and most efficient technologies available and with the least delay. For accurate and precise monitoring, clear images should be obtained from the location and changes should be detected, and the device can be controlled very quickly with the necessary commands. To do this, one must have an accurate and comprehensive knowledge of processors and communication protocols, and also pay attention to...
Monitoring of Ion Implanter Radiation
, M.Sc. Thesis Sharif University of Technology ; Rashidian, Bizhan (Supervisor)
Abstract
X-ray radiation is an ionizing radiation that can be produced under some conditions in an ion implanter and can have significant effects on equipment and personnel health. In this dissertation, we first examine the properties of ionizing radiations and their effects of electronic devices and discuss the general properties of common detectors. Next, Using Silvaco TCAD and GEANT4 we will simulate the interaction of ionzing radiation with energies up to 300 keV with electronic devices including a commercial off the shelf photo diode and a specialized x-ray detector and show that these devices can efficiently reveal informations of a radiation source to the user. Also, it has been shown that...
Oxidation effects on transport characteristics of nanoscale MOS capacitors with an embedded layer of silicon nanocrystals obtained by low energy ion implantation
, Article Materials Science and Engineering B: Solid-State Materials for Advanced Technology ; Volume 124-125, Issue SUPPL , 2005 , Pages 494-498 ; 09215107 (ISSN) ; Shalchian, M ; Benassayag, G ; Coffin, H ; Bonafos, C ; Schamm, S ; Atarodi, S. M ; Claverie, A ; Sharif University of Technology
2005
Abstract
In this paper, we have studied the effect of annealing under slightly oxidizing ambient (N2 + O2) on the structural and electrical characteristics of a limited number of silicon nanoparticles embedded in an ultra-thin SiO2 layer. These nanoparticles were synthesized by ultra-low energy (1 keV) ion implantation and annealing. Material characterization techniques including transmission electron microscopy (TEM), Fresnel imaging and spatially resolved electron energy loss spectroscopy (EELS) have been used to evaluate the effects of oxidation on structural characteristics of nanocrystal layer. Electrical transport characteristics have been measured on less than one hundred nanoparticles by...
From continuous to quantized charging response of silicon nanocrystals obtained by ultra-low energy ion implantation
, Article Solid-State Electronics ; Volume 49, Issue 7 , 2005 , Pages 1198-1205 ; 00381101 (ISSN) ; Grisolia, J ; Ben Assayag, G ; Coffin, H ; Atarodi, S. M ; Claverie, A ; Sharif University of Technology
2005
Abstract
In this paper, we present a study on the contribution of silicon nanocrystals to the electrical transport characteristics of large (100 μm × 100 μm) and small (100 nm × 100 nm) metal-oxide-semiconductor (MOS) capacitors at room temperature. A layer of silicon nanocrystals is synthesized within the oxide of these capacitors by ultra-low energy ion implantation and annealing. Several features including negative differential resistance (NDR), sharp current peaks and random telegraph signal (RTS) are demonstrated in the current-voltage and current-time characteristics of these capacitors. These features have been associated to charge storage in silicon nanocrystals and to the resulting Coulomb...
Room-temperature quantum effect in silicon nanoparticles obtained by low-energy ion implantation and embedded in a nanometer scale capacitor
, Article Applied Physics Letters ; Volume 86, Issue 16 , 2005 , Pages 1-3 ; 00036951 (ISSN) ; Grisolia, J ; Assayag, G. B ; Coffin, H ; Atarodi, S. M ; Claverie, A ; Sharif University of Technology
2005
Abstract
In this article, we present the room-temperature current-voltage characteristics of a nanometer scale (100×100 nm2) metal-oxide-semiconductor capacitor containing few (less than 100) silicon nanoparticles. The layer of silicon nanoparticles is synthesized within the oxide of this capacitor by ultra low-energy ion implantation and annealing. Current fluctuations in the form of discrete current steps and sharp peaks appeared in the static and dynamic I (V) characteristics of the capacitor. These features have been associated to quantized charging and discharging of the nanoparticles and the resulting Coulomb interaction to the tunneling current. © 2005 American Institute of Physics
From continuous to quantized charging phenomena in few nanocrystals MOS structures
, Article 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2005, 25 September 2005 through 30 September 2005 ; Volume 108-109 , 2005 , Pages 25-32 ; 10120394 (ISSN); 9783908451136 (ISBN) ; Shalchian, M ; Grisolia, J ; Bonafos, C ; Atarodi, S. M ; Claverie, A ; Pichaud B ; Claverie A ; Alquier D ; Richter H ; Kittler M ; Richter H ; Kittler M ; Sharif University of Technology
Trans Tech Publications Ltd
2005
Abstract
In this paper, we present a study on the contribution of silicon nanocrystals to the electrical transport characteristics of large (100 µ x 100 µm) and small (100 nm x 100 nm) metaloxide- semiconductor (MOS) capacitors at room temperature. A layer of silicon nanocrystals is synthesized within the oxide of these capacitors by ultra-low energy ion implantation and annealing. Several features including negative differential resistance (NDR), sharp current peaks and random telegraph signal (RTS) are demonstrated in the current-voltage and current-time characteristics of these capacitors. These features have been associated to charge storage in silicon nanocrystals and to the resulting Coulomb...
Designing an adjustable wide range regulated current source
, Article IEEE Transactions on Power Electronics ; Volume 25, Issue 1 , 2010 , Pages 197-208 ; 08858993 (ISSN) ; Rashidian, B ; Zolghadri, M. R ; Alavi, S. M. H ; Sharif University of Technology
Abstract
LLC resonant converter has been used widely as dc-dc converter for achieving constant dc voltage. In this paper, an LLC resonant converter, by adding an inductance to its conventional topology and considering the rectifying stage stray inductances, is proposed for an adjustable wide range regulated current source (20-200 A dc) for using as ion implanter's filament power supply. The additional inductor increases output current adjustment range and efficiency, especially at light loads. Transformer's leakage inductances and rectifying stage stray inductances have been considered. Because of these inductances, the rectifier stage always works in continuous conduction mode, and its conduction...
Wide adjustable range LLC resonant converter's maximum switching frequency for realizing the ZVS operation
, Article Proceedings - 2010 18th Iranian Conference on Electrical Engineering, ICEE 2010, 11 May 2010 through 13 May 2010 ; 2010 , Pages 745-752 ; 9781424467600 (ISBN) ; Rashidian, B ; Zolghadri, M. R ; Alavi, M. H ; Sharif University of Technology
Abstract
In this paper, the FHA and a simple TDA approaches have been used to derive the normalized maximum switching frequency of wide adjustable range LLC resonant converter for realizing the ZVS operation even under the worst-case conditions. By accounting the resonant current higher harmonics, more accurate expressions are derived. These analyses demonstrate that the normalized maximum switching frequency depends on the dead-time and the converter inductance ratio. It also depends on the ratio of the converter resonant capacitor and the effective capacitance appeared in parallel with the power MOSFETs drain-sources. The simulated and experimental results are in good agreement with the derived...
Optimizing the LLC-LC resonant converter topology for wide-output-voltage and wide-output-load applications
, Article IEEE Transactions on Power Electronics ; Volume 26, Issue 11 , 2011 , Pages 3192-3204 ; 08858993 (ISSN) ; Zolghadri, M. R ; Rashidian, B ; Alavi, S. M. H ; Sharif University of Technology
2011
Abstract
LLC-LC resonant converter is a suitable circuit topology to design switched-mode power supplies for wide-output-voltage and wide-output-load applications. In this paper, a design procedure is introduced to optimize this converter. Unlike soft switching techniques for pulse width modulated converters, which usually apply an active auxiliary circuit to reduce switching losses and EMI, in the proposed converter, not only such circuits are not used, but also all of the parasitic elements are merged to the converters main components. Zero-voltage switching (ZVS) operation is realized for all power devices under all operating conditions. Thus, this converter is a suitable choice for...