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    SiC Production by Chemical Vapor Deposition Method

    , M.Sc. Thesis Sharif University of Technology Habibian Nejad, Ali (Author) ; Farhadi, Fathola (Supervisor)
    Abstract
    Silicon carbide due to its noticeable mechanical and thermal properties, uses in various industries either main substrate or reinforcement. SiC has low specific surface area according to its resistivity against sintering. Recently, a lot of scientists have been worked on SiC in order to fabricating small ones ; subsequently, better sintering will be achieved. Chemical vapor deposition method (CVD) is a method to produce fine SiC with deposition of products by reacting of initial materials from gas environment. In this study normal CVD as proper method and hydrogen, silicon tetrachloride and activated carbon as initial materials are chosen. Using of iron and nickel catalysts in temperature...