Sharif Digital Repository

Semiconductor gas sensors have been developed so far on empirical bases, but now recent innovative materials for advancing gas sensor technology have been made available for further developments. Two-dimensional (2D) materials have gained immense attention since the advent of graphene. This attention inspired researchers to explore a new family of potential 2D materials. The superior structural, mechanical, optical and electrical properties of 2D materials made them attractive for next-generation smart device applications. There are considerable improvements and research studies on graphene, molybdenum disulfide (MoS2), tungsten disulfide (WS2), tin sulfide (SnS2), black phosphorus and other... 

PbS quantum dots (QDs) have been extensively studied for photovoltaic applications, thanks to their facile and low-cost fabrication processing and interesting physical properties such as size dependent and tunable band gap. However, the performance of PbS QD-based solar cells is highly sensitive to the humidity level in the ambient air, which is a serious obstacle toward its practical applications. Although it has been previously revealed that oxygen doping of the hole transporting layer can mitigate the cause of this issue, the suggested methods to recover the device performance are time-consuming and relatively costly. Here, we report a low-power oxygen plasma treatment as a rapid and... 

SnS2-SnO2 nano-heterostructures are synthesized with two different precursors of thioacetamide (TAA) and thiourea (TU) at various solvent ratios (SR) of ethanol and water by using a facile, economical, scalable, and cost-effective solvothermal method. The obtained products have been characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDX), and Brunauer–Emmet–Teller (BET) techniques. It is found that different precursors and various SR values have an influence on the composition and morphologies of the prepared nanostructures, leading to variation in capacitive behavior of the fabricated electrodes.... 

Two-dimensional semiconductor materials can be combined with conventional silicon-based technology and sort out part of the future challenges in semiconductor technologies due to their novel electrical and optical properties. Here, we exploit the optoelectronics property of the silicon/SnS2 heterojunction and present a new class of backward diodes using a straightforward fabrication method. The results indicate an efficient device with fast photoresponse time (5-10 μs), high photoresponsivity (3740 AW-1), and high quantum efficiency (490%). We discuss device behavior by considering the band-to-band tunneling model and band bending characteristics of the heterostructure. This device structure... 

The high mobility of charge carriers in graphene (G) together with the ease of processing and tunable optical properties of colloidal quantum dots (CQD) has provided high-performance hybrids for the next generation of phototransistors. In order to get a higher quality film of PbS QDs, understanding the effect of the ligand exchange method is critical. So, to improve the interdot electronic coupling, we propose a new conducting ligand to prepare a dense and self-assembled active layer of FAPbI3-PbS quantum dots on G/Si/SiO2substrates. Quantum dot (QD) nanocrystalline films were preparedviatwo different procedures: liquid phase ligand exchange (LPE) and solid phase ligand exchange (SPE). SPE... 

Due to the favorable properties of two-dimensional materials such as SnS2, with an energy gap in the visible light spectrum, and InSe, with high electron mobility, the combination of them can create a novel platform for electronic and optical devices. Herein, we study a tunable gain SnS2/InSe Van der Waals heterostructure photodetector. SnS2 crystals were synthesized by chemical vapor transport method and characterized using X-ray diffraction and Raman spectroscopy. The exfoliated SnS2 and InSe layers were transferred on the substrate. This photodetector presents photoresponsivity from 14 mA/W up to 740 mA/W and detectivity from 2.2 × 108 Jones up to 3.35 × 109 Jones by gate modulation from... 

The type of passivating ligands and the ligand exchange method influence the quality of lead sulfide quantum dot films. This imparts on the efficiency of optoelectronic devices. To get a compact arrangement of the nanocrystals in a thin film (⁓100 nm) via self-assembling, we used organic-inorganic perovskites with mixed halides for the solid-state exchange of oleic acid ligands on PbS QDs (⁓ 4 nm). Formamidinium lead halides FAPbIxBr3-x (x= 3,2,1,0) were used. X-ray spectroscopy shows that successful replacement of oleic acid with FA happens by short immersion of the films (2 min) in the solution. Transmission electron microscopy shows that nano-scale cracks, short-range ordering, and fusion... 

CdS is conventionally used as the n-type buffer layer in chalcopyrite (CIG(S, Se)) and Kesterite (CZT(S, Se)) solar cells. CdS is toxic and there are wide attempts to find substitutes for it. Here, we suggest SnS2 as a possible alternative. SnS2 films were deposited by pulsed laser deposition (PLD), characterized to estimate carrier concentration and electron affinity values, and the obtained values were used to model a CZT(S, Se) solar cell. The experimental values of a benchmark CZT(S, Se) cell with efficiency of 12.3% were employed to obtain the density and energy position of defects in CZT(S, Se) and validating the model. We observed that SnS2 results in almost identical performance as... 

Tin sulfide (SnS2) has recently attracted considerable attention due to its layered structure that may form two dimensional morphologies. It is an n-type semiconductor with band gap and electron affinity similar to CdS and In2S3; therefore can be regarded as an alternative for these materials in thin film solar cells. Here, we synthesis of SnS2 nanoparticles with different morphology in different ratio of water-ethanol mixed solution by solvothermal method, and observe that more ethanol leads to large sheet like morphologies, while water based synthesis results in very small nanosheets. A challenge in wet deposition of device-quality thin films of SnS2 is the requirement for highly dispersed...