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    The Effect of Cadmium, Calcium and Zinc on Optoelectronic Properties of PbS Quantum Dots

    , M.Sc. Thesis Sharif University of Technology Mirfasih, Mohammad Hassan (Author) ; Simchi, Abdolreza (Supervisor)
    Abstract
    In recent years, much attention has been focused on quantum dot films due to their high amount of surface area and their size-dependant band-gap tenability. However, high surface area results in increase in energy traps in case of insufficient surface passivation. In this research, PbS colloidal quantum dots were synthesized via hot injection route having the size of 3 nm approximately. Then cationic doping with Zn, Ca and Cd and ligand exchange of long oleic acid with short organic mercaptopionic acid were done. Excitonic peak of these dots and photoluminescence peak appeard in wavelengths of 930 and 1100 nm respectively. Optimum film thickness was also determined as 300 nm. Quantum dot... 

    Surface engineering of pbs colloidal quantum dots using atomic passivation for photovoltaic applications

    , Article 8th International Conference on Materials for Advanced Technologies, 28 June 2015 through 3 July 2015 ; Volume 139 , 2016 , Pages 117-122 ; 18777058 (ISSN) Tavakoli, M. M ; Sharif University of Technology
    Elsevier Ltd 
    Abstract
    Solution-processed quantum dots (QDs) have attracted significant attention for the low-cost fabrication of optoelectronic devices. Here, we synthesized PbS QDs via hot injection method and passivated the trap states by using short thiols and dopant elements for photovoltaic application. In order to study the effect of dopants on photovoltaic application, PbS QDs were doped by using three different cations: Cadmium, Calcium, and Zinc. We utilized Time resolvel Photoluminescence measurement to study the carriers lifetime for different samples and found that the carriers life time increases ∼80% by using Cd as a dopant compared with undoped sample. In addition, the results of J-V measurement... 

    Organic halides and nanocone plastic structures enhance the energy conversion efficiency and self-cleaning ability of colloidal quantum dot photovoltaic devices

    , Article Journal of Physical Chemistry C ; Volume 121, Issue 18 , 2017 , Pages 9757-9765 ; 19327447 (ISSN) Tavakoli, M. M ; Simchi, A ; Tavakoli, R ; Fan, Z ; Sharif University of Technology
    American Chemical Society  2017
    Abstract
    This paper presents solid-state ligand exchange of spin-coated colloidal lead sulfide quantum dot (PbS QD) films by methylammonium iodide (MAI) and integration of them in depleted heterojunction solar (DHS) devices having an antireflecting (AR) nanocone plastic structure. Time-resolved photoluminescence measurements determine a shorter lifetime of the charge carries on a semiconductor (TiO2) electron transfer layer for the MAI-passivated QD films as compared with those with long-chain aliphatic or short thiol ligands. Consequently, the DHS device yields improved power conversion efficiency (>125%) relative to oleic-acid-passivated PbS QD films. Using anodized aluminum oxide templates, an... 

    Efficient FAPbI3-PbS quantum dot graphene-based phototransistors

    , Article New Journal of Chemistry ; Volume 45, Issue 34 , 2021 , Pages 15285-15293 ; 11440546 (ISSN) Aynehband, S ; Mohammadi, M ; Poushimin, R ; Nunzi, J. M ; Simchi, A ; Sharif University of Technology
    Royal Society of Chemistry  2021
    Abstract
    The high mobility of charge carriers in graphene (G) together with the ease of processing and tunable optical properties of colloidal quantum dots (CQD) has provided high-performance hybrids for the next generation of phototransistors. In order to get a higher quality film of PbS QDs, understanding the effect of the ligand exchange method is critical. So, to improve the interdot electronic coupling, we propose a new conducting ligand to prepare a dense and self-assembled active layer of FAPbI3-PbS quantum dots on G/Si/SiO2substrates. Quantum dot (QD) nanocrystalline films were preparedviatwo different procedures: liquid phase ligand exchange (LPE) and solid phase ligand exchange (SPE). SPE...