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Real-space exciton distribution in strained-siligraphene g-SiC7
, Article Journal of Applied Physics ; Volume 126, Issue 6 , 2019 ; 00218979 (ISSN) ; Ebrahimi, M. R ; Davoudiniya, M ; Yarmohammadi, M ; Sharif University of Technology
American Institute of Physics Inc
2019
Abstract
Siligraphene belonging to the family of two-dimensional (2D) materials has great potential in optoelectronics due to its considerable excitonic effects. In this study, the strain effects on the electronic structure and the real-space exciton wave functions of g - SiC 7 are investigated using the first-principles calculations based on the ab initio many-body perturbation theory. Alongside the increase (decrease) of the bandgap with compressive (tensile) strain, our results show that the exciton in the siligraphene monolayer under in-plane biaxial compressive strains is much more localized than that in the case of tensile one, leading to the higher and lower exciton binding energies,...