Sharif Digital Repository

This paper presents a new cache scheme based on varying the size of sets in the set-associative cache hierarchically. In this scheme, all sets at a hierarchical level have same size but are fc times more than the size of sets in the next level of hierarchy where k is called division factor. Therefore the size of tag fields associated to each set is variable and it depends on the hierarchy level of the set it is in. This scheme is proposed to achieve higher hit ratios with respect to the two conventional schemes namely set-associative and direct mapping. The proposed scheme has been simulated with several standard trace files SPEC 2000 and statistics are gathered and analyzed for different... 

In this paper, a new cache placement scheme is proposed to achieve higher hit ratios with respect to the two conventional schemes namely set-associative and direct mapping. Similar to set-associative, in this scheme, cache space is divided into sets of different sizes. Hence, the length of tag fields associated to each set is also variable and depends on the partition it is in. The proposed mapping function has been simulated with some standard trace files and statistics are gathered and analyzed for different cache configurations. The results reveal that the proposed scheme exhibits a higher hit ratio compared to the two well-known mapping schemes, namely set-associative and direct mapping,... 

Solid State Drives (SSDs) have recently emerged as a high speed random access alternative to classical magnetic disks. To date, SSD designs have been largely based on multi-channel bus architecture that confronts serious scalability problems in high-end enterprise SSDs with dozens of flash memory chips and a gigabyte host interface. This forces the community to rapidly change the bus-based inter-flash standards to respond to ever increasing application demands. In this paper, we first give a deep look at how different flash parameters and SSD internal designs affect the actual performance and scalability of the conventional architecture. Our experiments show that SSD performance improvement... 

Emerging Non-Volatile Memories (NVMs) have promising advantages (e.g., lower idle power, higher density, and non-volatility) over the existing predominant main memory technology, DRAM. Yet, NVMs also have disadvantages (e.g., longer latencies, higher active power, and limited endurance). System architects are therefore examining hybrid DRAM-NVM main memories to enable the advantages of NVMs while avoiding the disadvantages as much as possible. Unfortunately, the hybrid memory design space is very large and complex due to the existence of very different types of NVMs and their rapidly-changing characteristics. Therefore, optimization of performance and lifetime of hybrid memory based... 

Advanced metering infrastructure (AMI) provides 2-way communications between the utility and the smart meters. Developing authenticated key exchange (AKE) and broadcast authentication (BA) protocols is essential to provide secure communications in AMI. The security of all existing cryptographic protocols is based on the assumption that secret information is stored in the nonvolatile memories. In the AMI, the attackers can obtain some or all of the stored secret information from memories by a great variety of inexpensive and fast side-channel attacks. Thus, all existing AKE and BA protocols are no longer secure. In this paper, we investigate how to develop secure AKE and BA protocols in the... 

As technology size scales down, magnetic tunnel junctions (MTJs) as a promising technology are becoming more and more sensitive to process variation, especially in oxide barrier thickness. Process variation particularly affects the cell resistance and the critical switching current for the smaller dimensions. This article proposes an MTJ cell with one free and two pinned layers, which highly improves the process variation robustness. By employing the spin transfer torque (STT)-spin-Hall effect (SHE) switching method, our proposed MTJ cell improves the switching speed and lowers the switching power consumption. Per simulations, an MRAM cell built with the proposed MTJ cell offers up to 36%...