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Analysis and simulation of ring resonator silicon electro-optic modulators based on PN junction in reverse bias
, Article Optical Engineering ; Vol. 53, issue. 12 , 2014 ; ISSN: 00913286 ; Akbari, M ; Sharif University of Technology
Abstract
The theory of silicon optical modulators of ring resonators based on PN diode in reverse bias is primarily discussed. It secondarily provides a full-featured simulator to investigate the behavior of such modulators. Wave equation for ring structure will be solved by using the conformal transformation method and the matrix method as it was used to analyze bent planar optical waveguides. Power coupling between ring and straight waveguides will be calculated by coupled theory of nonparallel waveguides based on experimental results. The time response demonstrates the capability of this device to operate correctly at up to 10 Gbs-1 bitrate, and the frequency spectrum analysis of device shows a >...
Optimization and simulation of micrometre-scale ring resonator modulators based on p-i-n diodes using firefly algorithm
, Article Optik ; Volume 128 , 2017 , Pages 101-112 ; 00304026 (ISSN) ; Akbari, M ; Sharif University of Technology
Elsevier GmbH
2017
Abstract
Field analysis of ring resonator modulators based on p-i-n diodes has been dissected in this paper. This analysis is performed in time and frequency domains. The conformal transformation method has been used for solving 3-D wave equation. Coupling coefficient between the ring and straight waveguides are obtained by developing the coupled-mode assumption. In the resonant wavelength of 1573.91 nm, a drop of more than 15 dB in frequency spectrum of the device has been observed. Time domain simulation shows that this modulator could support up to 0.4 Gb/s and up to 1.5 Gb/s for NRZ and RZ signals, respectively. Obtained simulation results in both domains have been properly complied with...