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    Effects of crystal orientation on the tensile and shear deformation of nickel-silicon interfaces: A molecular dynamics simulation

    , Article Materials Science and Engineering A ; Volume 543 , 2012 , Pages 217-223 ; 09215093 (ISSN) Amini, H ; Simchi, A ; Kokabi, A. H ; Sharif University of Technology
    Atomistic simulation was used to study the deformation and fracture mechanisms of Ni-Si interfaces under tensile and shear loads dependent on the crystal structure of interface zone. Modified embedded atom method (MEAM) potential was utilized for molecular dynamics (MD) modeling. The simulation includes analysis of common neighbors, coordination number, least-square atomic local strain, and radial distribution function. The profound effect of interface crystallography on the tensile and shear deformation is shown. The highest tensile strength is obtained for interfaces with high plane density due to lowest atomic disorder while under shear loading planes with low density exhibit a high local... 

    Molecular dynamics investigation of β-SiC behavior under three-axial tensile loading

    , Article Journal of Computational and Theoretical Nanoscience ; Volume 8, Issue 11 , 2011 , Pages 2187-2192 ; 15461955 (ISSN) Mortazavi, B ; Simchi, A ; Besharati Givi, M. K ; Rajabpour, A ; Sharif University of Technology
    Molecular dynamics (MD) simulations were used to study the mechanical behaviour of β-SiC at nano-scale under tensile loading. Effects of loading rate and tensile temperature on the mechanical properties and failure were studied. Modified embedded-atom method (MEAM) potential and Berendsen thermostat were utilized for modelling. Periodic boundary conditions were employed and the behaviour of material was analyzed under three-axial loading condition at which the stress- strain relation was acceptably size independent. It is shown that with increasing the loading rate from 5 m/s to 70 m/s, the failure strain increases without a remarkable change in the stress-strain relationship. The MD...