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    A superconductor THz modulator based on vortex flux flow

    , Article IEEE Transactions on Applied Superconductivity ; Volume 19, Issue 4 , 2009 , Pages 3653-3657 ; 10518223 (ISSN) Sarreshtedari, F ; Hosseini, M ; Chalabi, H. R ; Moftakharzadeh, A ; Zandi, H ; Khorasani, S ; Fardmanesh, M ; Sharif University of Technology
    2009
    Abstract
    A terahertz modulator based on the Type-II superconductor flux flow oscillator has been proposed. Analytical calculations are presented and the effects of intrinsic and extrinsic parameters such as disorder strength of crystal, penetration depth, frequency, and amplitude of the modulated current on the radiation power spectrum have been studied. The proposed structure also exhibits a mixer-like behavior, in the sense that its output harmonics range from the washboard frequency up to the superconductor gap frequency, so the input signal is practically mixed with the washboard frequency and its harmonics. The modulation index for each harmonic of this modulator has also been investigated. This... 

    Lateral BN-BCN heterostructure tunneling transistor with large current modulation

    , Article ACS Applied Electronic Materials ; Volume 4, Issue 7 , 2022 , Pages 3520-3524 ; 26376113 (ISSN) Horri, A ; Faez, R ; Sharif University of Technology
    American Chemical Society  2022
    Abstract
    This paper, for the first time, presents a lateral tunneling transistor based on a two-dimensional boron nitride (BN) and hexagonal boron-carbon-nitrogen (hBCN) heterostructure. The device operation is analyzed based on a non-equilibrium Greens Function (NEGF) method and an atomistic tight-binding (TB) model. The TB hopping parameters are achieved by fitting the bandstructure to density functional theory (DFT) results. This model has been used to calculate the electrical characteristics of the device, such as ION/IOFFratio, subthreshold swing, and intrinsic gate-delay time. The results indicate a switching ratio of over eight orders of magnitude, much higher than the previous two-dimensional... 

    Harmonic content and relaxation resonant frequency of a modulated laser diode

    , Article Scientia Iranica ; Volume 16, Issue 2 D , 2009 , Pages 145-156 ; 10263098 (ISSN) Zandi, H ; Bavafa, M ; Chamanzar, M. R ; Khorasani, S ; Sharif University of Technology
    2009
    Abstract
    In this paper, an analysis of the harmonic contents of the optical output power for an in-plane single mode laser diode is performed, and the results are described in detail. In the first step, the absolute value of power for each harmonic is obtained in terms of various laser diode parameters, and the variations of external parameters, such as modulation current, bias current and frequency, are discussed. The analysis is done by direct solution of the rate equations of an arbitrary laser diode for carrier and photon densities. It is known that the optical power has a nonlinear dependence on frequency, and the maximum optical power of each harmonic is attained in its resonance frequency. The...