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mos-capacitors
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From continuous to quantized charging phenomena in few nanocrystals MOS structures
, Article 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005, Giens, 25 September 2005 through 30 September 2005 ; Volume 108-109 , 2005 , Pages 25-32 ; 10120394 (ISSN); 3908451132 (ISBN); 9783908451136 (ISBN) ; Shalchian, M ; Grisolia, J ; Bonafos, C ; Atarodi, S. M ; Claverie, A ; Sharif University of Technology
Trans Tech Publications Ltd
2005
Abstract
In this paper, we present a study on the contribution of silicon nanocrystals to the electrical transport characteristics of large (100 μm × 100 μm) and small (100 nm × 100 nm) metaloxide-semiconductor (MOS) capacitors at room temperature. A layer of silicon nanocrystals is synthesized within the oxide of these capacitors by ultra-low energy ion implantation and annealing. Several features including negative differential resistance (NDR), sharp current peaks and random telegraph signal (RTS) are demonstrated in the current-voltage and current-time characteristics of these capacitors. These features have been associated to charge storage in silicon nanocrystals and to the resulting Coulomb...
Electrical properties of nanocontacts on silicon nanoparticles embedded in thin SiO2 synthesized by ultralow energy ion implantation
, Article Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures ; Volume 23, Issue 6 , 2005 , Pages 2821-2824 ; 10711023 (ISSN) ; Shalchian, M ; Coffin, H ; Claverie, A ; Grisolia, J ; Dumas, C ; Atarodi, S. M ; Sharif University of Technology
2005
Abstract
In this paper, we present the room temperature current-voltage characteristics of large (100×100 μ m2) and a nanoscale (100×100 nm2) metal-oxide-semiconductor (MOS) capacitor containing few silicon nanocrystals. The layer of silicon crystals is synthesized within the oxide of this capacitor by ultralow energy ion implantation and annealing. Current fluctuations in the form of discrete current steps and sharp peaks are apparent in the static and dynamic I (V) characteristics of the capacitor. These features have been associated to quantized charging and discharging of the nanoparticles and the resulting Coulomb interaction to the tunneling current. © 2005 American Vacuum Society
Oxidation effects on transport characteristics of nanoscale MOS capacitors with an embedded layer of silicon nanocrystals obtained by low energy ion implantation
, Article Materials Science and Engineering B: Solid-State Materials for Advanced Technology ; Volume 124-125, Issue SUPPL , 2005 , Pages 494-498 ; 09215107 (ISSN) ; Shalchian, M ; Benassayag, G ; Coffin, H ; Bonafos, C ; Schamm, S ; Atarodi, S. M ; Claverie, A ; Sharif University of Technology
2005
Abstract
In this paper, we have studied the effect of annealing under slightly oxidizing ambient (N2 + O2) on the structural and electrical characteristics of a limited number of silicon nanoparticles embedded in an ultra-thin SiO2 layer. These nanoparticles were synthesized by ultra-low energy (1 keV) ion implantation and annealing. Material characterization techniques including transmission electron microscopy (TEM), Fresnel imaging and spatially resolved electron energy loss spectroscopy (EELS) have been used to evaluate the effects of oxidation on structural characteristics of nanocrystal layer. Electrical transport characteristics have been measured on less than one hundred nanoparticles by...
Room-temperature quantum effect in silicon nanoparticles obtained by low-energy ion implantation and embedded in a nanometer scale capacitor
, Article Applied Physics Letters ; Volume 86, Issue 16 , 2005 , Pages 1-3 ; 00036951 (ISSN) ; Grisolia, J ; Assayag, G. B ; Coffin, H ; Atarodi, S. M ; Claverie, A ; Sharif University of Technology
2005
Abstract
In this article, we present the room-temperature current-voltage characteristics of a nanometer scale (100×100 nm2) metal-oxide-semiconductor capacitor containing few (less than 100) silicon nanoparticles. The layer of silicon nanoparticles is synthesized within the oxide of this capacitor by ultra low-energy ion implantation and annealing. Current fluctuations in the form of discrete current steps and sharp peaks appeared in the static and dynamic I (V) characteristics of the capacitor. These features have been associated to quantized charging and discharging of the nanoparticles and the resulting Coulomb interaction to the tunneling current. © 2005 American Institute of Physics
Gain boosted amplifier design for low power-high speed applications
, Article Conference Proceedings - 2nd Annual IEEE Northeast Workshop on Circuits and Systems, NEWCAS 2004, Montreal, Que., 20 June 2004 through 23 June 2004 ; 2004 , Pages 233-235 ; 0780383222 (ISBN) ; Foruzandeh, B ; Farbiz, F ; Fathi, E ; Sharif University of Technology
2004
Abstract
In this paper, different models of gain enhanced amplifier are compared and the most accurate one is chosen. Based on this model, complete symbolic small signal analysis is performed and a design procedure leading to high speed gain boosted amplifier is presented