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In spite of various works which were carried out on CdO and porous Si (PSi) separately, the interesting properties of CdO/PSi/Si system are not known well. In this work, we study the photoconductivity of deposited CdO layer on PSi/Si system. PS and CdO layers were prepared by electrochemical anodisation of p-type crystalline silicon and pulsed laser deposition (PLD) of cadmium oxide target. Then samples were annealed in air at 500°C to increase their optical transmissions to a value as large as 90% for wavelengths above 700 nm. The XRD study reveals that the annealed films are polycrystalline with grain size of about 25 nm. SEM micrograph of the CdO/PSi/Si system indicates that CdO layer has...