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      The noise equivalent circuit model of quantum-dot lasers

      , Article Journal of Russian Laser Research ; Volume 33, Issue 3 , May , 2012 , Pages 217-226 ; 10712836 (ISSN) Horri, A ; Mirmoeini, S. Z ; Faez, R ; Sharif University of Technology
      2012
      Abstract
      We derive the noise equivalent circuit model of semiconductor self-assembled quantum-dot (QD) lasers (SAQDL) from the rate equations including Langevin noise sources. This equivalent circuit allows a straightforward calculation of the noise of an SAQDL combined with electronic components. Using the presented model, we study how the carrier dynamics influences relative intensity noise (RIN) of QD lasers. We demonstrate that RIN is degraded with larger inhomogeneous broadening. Furthermore, we show that RIN is enhanced for lower quantum-dot coverage level  
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