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Variational approach for extraction of leaky modes in layered waveguides
, Article Electro-Optical System Design, Simulation, Testing and Training, Seattle, WA, 9 July 2002 through 10 July 2002 ; Volume 4772 , 2002 , Pages 171-174 ; 0277786X (ISSN) ; Khorasani, S ; Rashidian, B ; SPIE ; Sharif University of Technology
2002
Abstract
In this article, a new variational approach for extraction of leaky modes in layered waveguides is proposed. To verify the method, results of analysis of a typical test case is compared to the other references, being in agreement with them. The efficiency of the proposed approach is compared to other reported methods
Efficient variational approach for extraction of eigenmodes in layered waveguides
, Article Physics and Simulation of Optoelectronic Devices X, San Jose, CA, 21 January 2002 through 25 January 2002 ; Volume 4646 , 2002 , Pages 669-673 ; 0277786X (ISSN) ; Mehrani, K ; Rashidian, B ; SPIE ; Sharif University of Technology
2002
Abstract
In this article, a new variational approach for extraction of guided and leaky modes in layered waveguides is proposed. To verify the method, results of analysis of a typical test case is compared to the other references, being in agreement with them. The efficiency of the proposed approach is compared to other reported methods
Self aligned passivation of Cu in Cu/Cr, Cu/V and Cu/Ta multilayers
, Article 12th International Conference on Microelectronics, ICM 2000, 31 October 2000 through 2 November 2000 ; Volume 2000-October , 2000 , Pages 209-212 ; 9643600572 (ISBN) ; Vashaei, Z ; Mahdavi, S. M ; Sharif University of Technology
Institute of Electrical and Electronics Engineers Inc
2000
Abstract
We compare Cu/M/SiO2 (M=Cr,V and Ta) multilayers that were deposited on Si substrates. Sample resistance measurements were carried out during annealing in 80% N2+20% H2, N2 and Ar environments. Resistivity measurements, SEM observations, RBS and AES spectroscopies from annealed samples showed good diffusion barrier properties for Cr and V but rather poor properties for Ta buffer layers. This is due to the amorphous nature of Cr films and formation of a continuous Cu overlayer. SEM observation also showed granular structure for Cu/V and Cu/Ta with grain sizes of about 500 and 1000 Å respectively. However, shallow nitrogen implantation in Cu/V samples and DC biasing for Cu/Ta layers during...