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Achieving subwavelength field confinement in sub-terahertz regime by periodic metallodielectric waveguides
, Article Optics Express ; Volume 27, Issue 4 , 2019 , Pages 4226-4237 ; 10944087 (ISSN) ; Ahmadi Boroujeni, M ; Abbaszadeh, A ; Sharif University of Technology
OSA - The Optical Society
2019
Abstract
In this paper, we report on a periodic metallo-dielectric structure that supports geometry-induced surface plasmons in the sub-terahertz regime. The proposed structure is made up of a dielectric-coated metallic grating sandwiched by parallel metal plates. Based on the modal analysis of 2D and 3D structures, the impact of a metal cladding and a customized dielectric coating on the dispersion relation and field distribution of the guided surface wave is investigated. It is found that modal field confinement is improved in the presence of a metal cladding without narrowing the operational bandwidth of the waveguide. Moreover, a customized subwavelength-sized dielectric coating based on...
Achieving subwavelength field confinement in sub-terahertz regime by periodic metallodielectric waveguides
, Article Optics Express ; Volume 27, Issue 4 , 2019 , Pages 4226-4237 ; 10944087 (ISSN) ; Ahmadi Boroujeni, M ; Abbaszadeh, A ; Sharif University of Technology
OSA - The Optical Society
2019
Abstract
In this paper, we report on a periodic metallo-dielectric structure that supports geometry-induced surface plasmons in the sub-terahertz regime. The proposed structure is made up of a dielectric-coated metallic grating sandwiched by parallel metal plates. Based on the modal analysis of 2D and 3D structures, the impact of a metal cladding and a customized dielectric coating on the dispersion relation and field distribution of the guided surface wave is investigated. It is found that modal field confinement is improved in the presence of a metal cladding without narrowing the operational bandwidth of the waveguide. Moreover, a customized subwavelength-sized dielectric coating based on...
A 6-Bit CMOS phase shifter for S - Band
, Article IEEE Transactions on Microwave Theory and Techniques ; Volume 58, Issue 12 PART 1 , 2010 , Pages 3519-3526 ; 00189480 (ISSN) ; Azizi, M ; Kiani, M ; Medi, A ; Atarodi, M ; Sharif University of Technology
Abstract
A 6-bit passive phase shifter for 2.5- to 3.2-GHz frequency band has been designed and implemented in a standard 0.18- μm CMOS technology. A new switched-network topology has been proposed for implementing the 5.625 ° phase shift step. The insertion loss of the circuit is compensated with an on-chip bidirectional amplifier. The measured return losses of the circuit are better than 8 dB with output 1-dB compression point of +9.5 dBm in the transmit mode and noise figure of 7.1 dB in the receive mode. The fabricated phase shifter demonstrates an average rms phase error of less than 2° over the entire operation bandwidth, which makes it suitable for high-precision applications