Loading...
Search for:
optoelectronic-technology
0.011 seconds
A Study on Optoelectronic Properties of Copper Zinc Tin Sulfur Selenide: A Promising Thin-Film Material for Next Generation Solar Technology
, Article Crystal Research and Technology ; Volume 56, Issue 7 , 2021 ; 02321300 (ISSN) ; Zubair, M ; Khesro, A ; Ahmed, R ; Uddin, S ; Shahzad, N ; Alrobei, H ; Kalam, A ; Al-Sehemi, A. G ; Ul Haq, B ; Sharif University of Technology
John Wiley and Sons Inc
2021
Abstract
Studies on copper zinc tin sulpher selenide (CZTSSe) thin-film material and its applications as a base material are intensively being researched since it is an earth-abundant, inexpensive, flexible, and interesting material for next-generation optoelectronic technologies. Apropos, this study explores and reports the synthesis of CZTSSe thin films and their key optoelectronics characteristics. The reported films are fabricated on a soda-lime glass substrate by using a physical vapor deposition technique, and then annealed from 250 to 450 °C. From the X-ray diffraction analysis, the structure of the as-deposited thin films is found to be amorphous in nature. Annealed thin films of CZTSSe...
A study on optoelectronic properties of copper zinc tin sulfur selenide: A promising thin-film material for next generation solar technology
, Article Crystal Research and Technology ; Volume 56, Issue 7 , 2021 ; 02321300 (ISSN) ; Zubair, M ; Khesro, A ; Ahmed, R ; Uddin, S ; Shahzad, N ; Alrobei, H ; Kalam, A ; Al Sehemi, A. G ; Ul Haq, B ; Sharif University of Technology
John Wiley and Sons Inc
2021
Abstract
Studies on copper zinc tin sulpher selenide (CZTSSe) thin-film material and its applications as a base material are intensively being researched since it is an earth-abundant, inexpensive, flexible, and interesting material for next-generation optoelectronic technologies. Apropos, this study explores and reports the synthesis of CZTSSe thin films and their key optoelectronics characteristics. The reported films are fabricated on a soda-lime glass substrate by using a physical vapor deposition technique, and then annealed from 250 to 450 °C. From the X-ray diffraction analysis, the structure of the as-deposited thin films is found to be amorphous in nature. Annealed thin films of CZTSSe...