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    Unstructured-coarse-grid generation usina backaround-grid approach

    , Article SPE Journal ; Volume 15, Issue 2 , 2010 , Pages 326-340 ; 1086055X (ISSN) Evazi, M ; Mahani, H ; Sharif University of Technology
    2010
    Abstract
    Reservoir flow simulation involves subdivision of the physical domain into a number of gridblocks. This is best accomplished with optimized gridpoint density and a minimized number of gridblocks, especially for coarse-grid generation from a fine-grid geological model. In any coarse-grid generation, proper distribution of gridpoints, which form the basis of numerical gridblocks, is a challenging task. We show that this can be achieved effectively by a novel grid-generation approach based on a background grid that stores gridpoint spacing parameters. Spacing parameter (L) can be described by Poisson's equation (▽2L = G), where the local density of gridpoints is controlled by a variable source... 

    Unstructured coarse grid generation for reservoir flow simulation using background grid approach

    , Article 16th Middle East Oil and Gas Show and Conference 2009, MEOS 2009, Manama, 15 March 2009 through 18 March 2009 ; Volume 2 , 2009 , Pages 685-697 ; 9781615670123 (ISBN) Evazi Yadecuri, M ; Mahani, H ; Sharif University of Technology
    2009
    Abstract
    Reservoir flow simulation involves subdivision of the physical domain into a number of gridblocks. This is best accomplished with optimized grid point density and minimized number of gridblocks especially for coarse grid generation from a fine grid geological model. In any coarse grid generation, proper distribution of grid points, which form basis of numerical gridblocks, is a challenging task. We show that this can be effectively achieved by generating a background grid that stores grid point spacing parameter. Spacing (X) can be described by Poisson's equation (∇2 L = G) where the local density of grid points is controlled by a variable source term (G). This source term can be based on... 

    Two-dimensional quantum simulation of scaling effects in ultrathin body MOSFET structure: NEGF approach

    , Article 14th International Workshop on the Physics of Semiconductor Devices, IWPSD, Mumbai, 16 December 2007 through 20 December 2007 ; 2007 , Pages 240-242 ; 9781424417285 (ISBN) Orouji, A.A ; Dehdashti, N ; Faez, R ; Sharif University of Technology
    2007
    Abstract
    For the first time, we present self-consistent solution of ultrathin body device structures to investigate the device parameters variation on the characteristics of nanoscale MOSFET. Our two dimensional (2-D) device simulator Is based on Nonequlibrium Green's Function (NEGF) forma lism. Starting from a basic structure (DG-MOSFET) with a gate length of 10 nm, variation of gate length, channel thickness, gate oxide parameters was carried out in connection with the numerical calculation of device characteristics. In this work Quantum transport equations are solved in 2-D by NEGF method in active area of the device to obtain the charge density and Poisson's equation is solved in entire domain of...