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    Study on different dimensions of C-type corona rings in 400 kV insulator strings based on fem analysis of electric field distribution

    , Article 27th Iranian Conference on Electrical Engineering, ICEE 2019, 30 April 2019 through 2 May 2019 ; 2019 , Pages 673-678 ; 9781728115085 (ISBN) Sardast, R ; Faghihi, F ; Vakilian, M ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2019
    Abstract
    This paper presents analysis of electric field distribution and optimization of C-type corona rings for 400 kV V-insulator strings composed of ceramic insulator units which are the most common configuration of overhead transmission lines. These strings are equipped with corona rings to enhance the insulation performance regarding to the effect of these rings on the insulation function and potential and electric field distribution. 3D field simulations are performed for the C-type of corona rings with different dimensions by software based on FEM analysis  

    LBM simulation of electro-osmotic flow (EOF) in nano/micro scales porous media with an inclusive parameters study

    , Article ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE) ; Vol. 7 , November , 2014 ; ISBN: 9780791849545 Zakeri, R ; Lee, E. S ; Salimi, M. R ; Sharif University of Technology
    Abstract
    In this paper, we present our results about simulation of 2D-EOF in Nano/Micro scales porous media using lattice Boltzmann method (LBM) in micro-channel for EOF. The high efficient numerical code use strongly high nonlinear Poisson Boltzmann equation to predicate behavior of EOF in complex geometry. The results are developed with precisely investigation of several effective parameters on permeability of EOF, such as geometry (channel height and number and location of charge), external electric field, thickness of Debye length (ionic concentration), and zeta potential. Our results are in excellent agreement with available analytical results. Our results show that for certain external electric... 

    Mixed pressure and AC electroosmotically driven flow with asymmetric wall zeta potential and hydrophobic surfaces

    , Article ASME 2013 Heat Transfer Summer Conf. Collocated with the ASME 2013 7th Int. Conf. on Energy Sustainability and the ASME 2013 11th Int. Conf. on Fuel Cell Science, Engineering and Technology, HT 2013 ; Volume 1 , 2013 ; 9780791855478 (ISBN) Lesani, M ; Sharif University of Technology
    2013
    Abstract
    The present study examines Alternating Current (AC) electroosmotic flows in a parallel plate microchannel subject to constant wall temperature. Numerical method consists of a central finite difference scheme for spatial terms and a forward difference scheme for the temporal term. Asymmetric boundary conditions are assumed for Poison-Boltzmann equation for determining the electric double layer (EDL) potential distribution. The potential distribution is then used to evaluate the velocity distribution. The velocity distribution is obtained by applying slip boundary conditions on the walls which accounts for probable hydrophobicity of surfaces. After determining the velocity distribution... 

    Numerical simulation of heat transfer in mixed electroosmotic pressure-driven flow in straight microchannels

    , Article Journal of Thermal Science and Engineering Applications ; Volume 8, Issue 2 , 2016 ; 19485085 (ISSN) Shamloo, A ; Merdasi, A ; Vatankhah, P ; Sharif University of Technology
    American Society of Mechanical Engineers (ASME)  2016
    Abstract
    This paper investigates two-dimensional, time-independent elecroosmotic pressuredriven flow generated by a direct current electric potential with asymmetrical and symmetrical zeta potential distributions along the microchannel walls. Fluid flow through the horizontal microchannel is simulated using a numerical method. Two different cases are proposed to study the effect of electric potential on the flow field. First, negative electric potential is applied on the microchannel walls. In this case, large segments with negative electric potential are initially placed on the first half of the microchannel walls with two different arrangements. Afterward, smaller segments with negative electric... 

    Simulation and optimization of HEMTs

    , Article 3rd International Conference on Advances in Computational Tools for Engineering Applications, 13 July 2016 through 15 July 2016 ; 2016 , Pages 1-6 ; 9781467385237 (ISBN) Ilatikhameneh, H ; Ashrafi, R ; Khorasani, S ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc 
    Abstract
    We have developed a simulation system for nanoscale high-electron mobility transistors, in which the self-consistent solution of Poisson and Schrödinger equations is obtained with the finite element method. We solve the exact set of nonlinear differential equations to obtain electron wave function, electric potential distribution, electron density, Fermi surface energy and current density distribution in the whole body of the device. For more precision, local dependence of carrier mobility on the electric field distribution is considered. We furthermore compare the simulation to a recent experimental measurement and observe perfect agreement. We also propose a novel graded channel design,... 

    A 3D analytical modeling of tri-gate tunneling field-effect transistors

    , Article Journal of Computational Electronics ; Volume 15, Issue 3 , 2016 , Pages 820-830 ; 15698025 (ISSN) Marjani, S ; Hosseini, S. E ; Faez, R ; Sharif University of Technology
    Springer New York LLC  2016
    Abstract
    In this paper, a three-dimensional (3D) analytical solution of the electrostatic potential is derived for the tri-gate tunneling field-effect transistors (TG TFETs) based on the perimeter-weighted-sum approach. The model is derived by separating the device into a symmetric and an asymmetric double-gate (DG) TFETs and then solving the 2D Poisson’s equation for these structures. The subthreshold tunneling current expression is extracted by numerical integrating the band-to-band tunneling generation rate over the volume of the device. It is shown that the potential distributions, the electric field profile, and the tunneling current predicted by the analytical model are in close agreement with...