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    The effects of recombination lifetime on efficiency and JV characteristics of InxGa1-xN/GaN quantum dot intermediate band solar cell

    , Article Physica E: Low-Dimensional Systems and Nanostructures ; Volume 42, Issue 9 , July , 2010 , Pages 2353-2357 ; 13869477 (ISSN) Es'Haghi Gorji, N ; Movla, H ; Sohrabi, F ; Hosseinpour, A ; Rezaei, M ; Babaei, H ; Sharif University of Technology
    We introduce a new third generation of solar cell structure which inserts different-sized quantum dots in the active region of a pin structure. Generating an intermediate band in the bandgap of the host material makes a good overlap with a part of solar spectrum. The effect of the recombination mechanisms on efficiency and currentvoltage characteristics of this intermediate band solar cell is calculated. We deduce that the increase in recombination lifetime of the excited carriers can improve the characteristics of this structure. This result can be a route which helps us to take the effect on solar cell characteristics into consideration