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The noise equivalent circuit model of quantum-dot lasers
, Article Journal of Russian Laser Research ; Volume 33, Issue 3 , May , 2012 , Pages 217-226 ; 10712836 (ISSN) ; Mirmoeini, S. Z ; Faez, R ; Sharif University of Technology
2012
Abstract
We derive the noise equivalent circuit model of semiconductor self-assembled quantum-dot (QD) lasers (SAQDL) from the rate equations including Langevin noise sources. This equivalent circuit allows a straightforward calculation of the noise of an SAQDL combined with electronic components. Using the presented model, we study how the carrier dynamics influences relative intensity noise (RIN) of QD lasers. We demonstrate that RIN is degraded with larger inhomogeneous broadening. Furthermore, we show that RIN is enhanced for lower quantum-dot coverage level
Relative intensity noise study in two mode quantum dot laser
, Article Optica Applicata ; Volume 41, Issue 4 , 2011 , Pages 961-970 ; 00785466 (ISSN) ; Mirmoeini, S. Z ; Faez, R ; Sharif University of Technology
2011
Abstract
In this paper, for the first time, we present a semiclassical noise model for InAs/GaAs quantum dot (QD) laser considering two photon modes, i.e., ground and first excited states lasing. This model is based on the five level rate equations. By using this model, the effect of temperature variations on relative intensity noise (RIN) of QD laser is investigated. We find that the RIN significantly degrades when excited state (ES) lasing emerges at high temperature. Furthermore, we investigate the influence of the quantum dot numbers on the RIN properties
Small signal circuit modeling for semiconductor self-assembled quantum dot laser
, Article Optical Engineering ; Volume 50, Issue 3 , 2011 ; 00913286 (ISSN) ; Faez, R ; Sharif University of Technology
Abstract
In this paper, for the first time, we present a small signal circuit model of InGaAs/GaAs self-assembled quantum dot (QD) laser, based on the standard rate equations. By using the presented model, modulation response of QD laser is investigated. The simulation results show that retarded carrier relaxation due to phonon bottleneck degrades the modulation and impulse responses of a QD laser. It is shown that modulation bandwidth is increased with larger inhomogeneous broadening. Also, our model describes the effects of carrier recombinations inside and outside of a QD region, on the modulation response behavior
A small signal circuit model of two mode InAs/GaAs quantum dot laser
, Article IEICE Electronics Express ; Volume 8, Issue 4 , 2011 , Pages 245-251 ; 13492543 (ISSN) ; Faez, R ; Hoseini, H. R ; Sharif University of Technology
2011
Abstract
In this paper, for the first time, we present a small signal circuit model of quantum dot laser considering two photon modes, i.e., ground and first excited states lasing. By using the presented model, effect of temperature variations on modulation response of quantum dot laser is investigated. Simulation results of modulation response are in agreement with the numerical and experimental results reported by other researchers