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The role of strain on the quantum spin hall effect and band inversion in stanene
, Article Computational Condensed Matter ; Volume 10 , 2017 , Pages 1-9 ; 23522143 (ISSN) ; Shodja, H. M ; Ojaghnezhad, F ; Sharif University of Technology
Elsevier B.V
2017
Abstract
Examination of the role of strain on the quantum spin hall (QSH) effect and band inversion for the monolayer of tin, stanene, is of interest. To this end, several uniaxial and biaxial strain loadings along the armchair (AC)- and zigzag (ZZ)-directions are applied using first principles calculations based on density functional theory (DFT). We observe QSH insulator as well as semi-metallic property associated with the strained stanene. © 2017 Elsevier B.V
Phase transition and field effect topological quantum transistor made of monolayer MoS2
, Article Journal of Physics Condensed Matter ; Volume 30, Issue 23 , 2018 , May ; 09538984 (ISSN) ; Simchi, M ; Fardmanesh, M ; Peeters, F. M ; Sharif University of Technology
Institute of Physics Publishing
2018
Abstract
We study topological phase transitions and topological quantum field effect transistor in monolayer molybdenum disulfide (MoS2) using a two-band Hamiltonian model. Without considering the quadratic (q 2) diagonal term in the Hamiltonian, we show that the phase diagram includes quantum anomalous Hall effect, quantum spin Hall effect, and spin quantum anomalous Hall effect regions such that the topological Kirchhoff law is satisfied in the plane. By considering the q 2 diagonal term and including one valley, it is shown that MoS2 has a non-Trivial topology, and the valley Chern number is non-zero for each spin. We show that the wave function is (is not) localized at the edges when the q 2...