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    Wannier functions for surface plasmon polaritons

    , Article Proceedings of SPIE - The International Society for Optical Engineering ; Volume 7946 , 2011 ; 0277786X (ISSN) ; 9780819484833 (ISBN) Hazeghi, A ; Khorasani, S ; The Society of Photo-Optical Instrumentation Engineers (SPIE) ; Sharif University of Technology
    Abstract
    Wannier functions are real space basis functions which are not unique due to an arbitrary phase factor in the Bloch envelope function. We exploit this property to optimize a spread functional numerically using an accelerated steepest descent, and obtain the maximally confined set of Wannier functions, which are obtained for the first time in the area of planar plasmonics and conducting interfaces  

    Improving ION / IOFF and sub-threshold swing in graphene nanoribbon field-effect transistors using single vacancy defects

    , Article Superlattices and Microstructures ; Volume 86 , October , 2015 , Pages 483-492 ; 07496036 (ISSN) Nazari, A ; Faez, R ; Shamloo, H ; Sharif University of Technology
    Academic Press  2015
    Abstract
    Graphene nanoribbon field effect transistors are promising devices for beyond-CMOS nanoelectronics. Graphene is a semiconductor material with zero bandgap and its bandgap must be changed. One of the opening bandgap methods is using graphene nanoribbons. By applying a defect, there is more increase on band gap of monolayer armchair graphene nanoribbon field effect transistor. So, by applying more than one defect, we can reach to much more increase in bandgap of graphene nanoribbon field effect transistors (GNRFET). In this paper, double-gated monolayer armchair graphene nanoribbon field effect transistors (GNRFET) with one single vacancy (1SV) defect (so-called 1SVGNRFET)are simulated and... 

    Local impact of Stone–Wales defect on a single layer GNRFET

    , Article Physics Letters, Section A: General, Atomic and Solid State Physics ; Volume 384, Issue 7 , 2020 Shamloo, H ; Nazari, A ; Faez, R ; Shahhoseini, A ; Sharif University of Technology
    Elsevier B.V  2020
    Abstract
    In this work, a new structure of single layer armchair graphene nanoribbon field effect transistor with the Stone–Wales (SW) defect (SWGNRFET) is studied. The simulations are solved with Poisson–Schrödinger equation self-consistently by using Non-Equilibrium Green Function (NEGF) and in the real space approach. The energy band structure is obtained by approximation tight-binding method. The results show that displacement of a defect in the width of the channel of the new structure is led to 50% increase in ION/IOFF ratio only by rotating of a C–C (Carbon–Carbon) bond with similar behavior. But, a remarkable increase of 300% in ION/IOFF ratio is obtained by a “dual center” defect. The results... 

    Study of two dimensional anisotropic Ising models via a renormalization group approach

    , Article Physica A: Statistical Mechanics and its Applications ; Volume 392, Issue 22 , 2013 , Pages 5604-5614 ; 03784371 (ISSN) Taherkhani, F ; Akbarzadeh, H ; Abroshan, H ; Ranjbar, S ; Fortunelli, A ; Parsafar, G ; Sharif University of Technology
    2013
    Abstract
    A method is developed to calculate the critical line of two dimensional (2D) anisotropic Ising model including nearest-neighbor interactions. The method is based on the real-space renormalization group (RG) theory with increasing block sizes. The reduced temperatures, Ks (where K=J/kBT and J, kB, and T are the spin coupling interaction, the Boltzmann constant, and the absolute temperature, respectively), are calculated for different block sizes. By increasing the block size, the critical line for three types of lattice, namely: triangular, square, and honeycomb, is obtained and found to compare well with corresponding results reported by Onsager in the thermodynamic limit. Our results also... 

    Modeling comparison of graphene nanoribbon field effect transistors with single vacancy defect

    , Article Superlattices and Microstructures ; Volume 97 , 2016 , Pages 28-45 ; 07496036 (ISSN) Nazari, A ; Faez, R ; Shamloo, H ; Sharif University of Technology
    Academic Press  2016
    Abstract
    In this paper, some important circuit parameters of a monolayer armchair graphene nanoribbon (GNR) field effect transistor (GNRFET) in different structures are studied. Also, these structures are Ideal with no defect, 1SVGNRFET with one single vacancy defect, and 3SVsGNRFET with three SV defects. Moreover, the circuit parameters are extracted based on Semi Classical Top of Barrier Modeling (SCTOBM) method. The I-V characteristics simulations of Ideal GNRFET, 1SVGNRFET and 3SVsGNRFET are used for comparing with SCTOBM method. These simulations are solved with Poisson-Schrodinger equation self-consistently by using Non- Equilibrium Green Function (NEGF) and in the real space approach. The... 

    Applying the system engineering approach to devise a master's degree program in space technology in developing countries

    , Article 60th International Astronautical Congress 2009, IAC 2009, Daejeon, 12 October 2009 through 16 October 2009 ; Volume 10 , 2009 , Pages 8365-8376 ; 9781615679089 (ISBN) Jazebizadeh, H ; Tabeshian, M ; Taheran Vernoosfaderani, M ; Sharif University of Technology
    2009
    Abstract
    Although more than half a century is passed since space technology was first developed, developing countries are just beginning to enter the arena, focusing mainly on educating professionals. Space technology by itself is an interdisciplinary science, is costly, and developing at a fast pace. Moreover, a fruitful education system needs to remain dynamic if the quality of education is the main concern, making it a complicated system. This paper makes use of the System Engineering Approach and the experiences of developed countries in this area while incorporating the needs of the developing countries to devise a comprehensive program in space engineering at the Master's level. The needs of...